M1102NC580 datasheet, PDF - EEWORLD Datasheet

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M1102NC580: DescriptionDIODE 1102 A, 5800 V, SILICON, RECTIFIER DIODE, Rectifier Diode; CategoryDiscrete semiconductor diode; File Size650KB，11 Pages; ManufacturerIXYS

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M1102NC580 Overview

DIODE 1102 A, 5800 V, SILICON, RECTIFIER DIODE, Rectifier Diode

M1102NC580 Parametric

Parameter Name	Attribute value
Maker	IXYS
package instruction	O-CEDB-N2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FAST RECOVERY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-CEDB-N2
Maximum non-repetitive peak forward current	14300 A
Number of components	1
Phase	1
Number of terminals	2
Maximum output current	1102 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5800 V
Maximum reverse recovery time	5.5 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	END

M1102NC580 Related Products

	M1102NC580	M55342K06B2F10MTP3	M1102NC560	M1102NC540	M1102NC500	M1102NC600
Description	DIODE 1102 A, 5800 V, SILICON, RECTIFIER DIODE, Rectifier Diode	Fixed Resistor, Metal Glaze/thick Film, 0.15W, 2100000ohm, 50V, 1% +/-Tol, 100ppm/Cel, Surface Mount, 0805, CHIP	DIODE 1102 A, 5600 V, SILICON, RECTIFIER DIODE, Rectifier Diode	Rectifier Diode, 1 Phase, 1 Element, 1102A, 5400V V(RRM), Silicon,	DIODE 1102 A, 5000 V, SILICON, RECTIFIER DIODE, Rectifier Diode	Rectifier Diode, 1 Phase, 1 Element, 1102A, 6000V V(RRM), Silicon,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	2	2	2	2	2	2
Package form	DISK BUTTON	SMT	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
surface mount	YES	YES	YES	YES	YES	YES
Maker	IXYS	-	IXYS	IXYS	IXYS	IXYS
package instruction	O-CEDB-N2	SMT, 0805	O-CEDB-N2	-	O-CEDB-N2	-
application	FAST RECOVERY	-	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-CEDB-N2	-	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum non-repetitive peak forward current	14300 A	-	14300 A	14300 A	14300 A	14300 A
Number of components	1	-	1	1	1	1
Phase	1	-	1	1	1	1
Maximum output current	1102 A	-	1102 A	1102 A	1102 A	1102 A
Package body material	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	5800 V	-	5600 V	5400 V	5000 V	6000 V
Maximum reverse recovery time	5.5 µs	-	5.5 µs	5.5 µs	5.5 µs	5.5 µs
Terminal form	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	-	END	END	END	END

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