FSS9130R4 datasheet, PDF - EEWORLD Datasheet

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FSS9130R4: Description6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size45KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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FSS9130R4 Overview

6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

FSS9130R4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	TO-257AA
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	0.66 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	18 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

FSS9130R4 Related Products

	FSS9130R4	FSS9130D3	FSS9130D1	FSS9130R1	FSS9130R3
Description	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA
Contacts	3	3	3	3	3
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V
Maximum drain current (ID)	6 A	6 A	6 A	6 A	6 A
Maximum drain-source on-resistance	0.66 Ω	0.66 Ω	0.66 Ω	0.66 Ω	0.66 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA
JESD-30 code	S-MSFM-P3	R-MSFM-P3	R-MSFM-P3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	18 A	18 A	18 A	18 A	18 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Other features	RADIATION HARDENED	-	-	RADIATION HARDENED	RADIATION HARDENED
Maximum drain current (Abs) (ID)	6 A	6 A	6 A	-	6 A
JESD-609 code	e0	e0	e0	-	e0
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED
Maximum power dissipation(Abs)	50 W	50 W	50 W	-	50 W
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED
Is Samacsys	-	N	N	N	-
Base Number Matches	-	1	1	1	-

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