High Voltage IGBT
( Electrically Isolated Tab)
IXGF32N170
V
CES
I
C110
V
CE(sat)
t
fi(typ)
=
=
≤
=
1700V
19A
3.5V
250ns
ISOPLUS i4-Pak
TM
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
t
sc
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
V
ISOL
Weight
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 minute
Test Conditions
T
J
= 25°C to 150°C
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 2.7Ω
Clamped Inductive Load
T
C
= 125°C, V
CE
= 1200V, V
GE
= 15V, R
G
= 10Ω
T
C
= 25°C
Maximum Ratings
1700
± 20
± 30
44
19
200
I
CM
= 70
@ 0.8 • V
CES
10
200
-55 ... +150
150
-55 ... +150
300
260
20..120 / 4.5..27
2500
5
μs
W
°C
°C
°C
°C
°C
Nm/lb.in.
V~
g
Features
Electrically Isolated Tab
High Current Handling Capability
Rugged NPT Structure
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Applications
Capacitor Discharge & Pulser Circuits
AC Motor Drives
Uninterruptible Power Supplies (UPS)
Switched-Mode and Resonant-Mode
Power Supplies
Advantages
High Power Density
Suitable for Surface Mounting
V
V
V
A
A
A
A
1 = Gate
2 = Emitter
5 = Collector
1
2
5
ISOLATED TAB
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1mA, V
GE
= 0V
= 250μA, V
CE
= V
GE
Characteristic Values
Min.
Typ.
Max.
1700
3.0
5.0
V
V
V
CE
= 0.8 • V
CES
, V
GE
= 0V, Note 2
T
J
= 125°C
V
CE
= 0V, V
GE
= ±20V
I
C
= 32A, V
GE
= 15V, Note 1
T
J
= 125°C
2.7
3.3
50
μA
1 mA
±100
3.5
nA
V
V
© 2009 IXYS CORPORATION, All Rights Reserved
DS99569B(5/09)
IXGF32N170
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
off
t
d(off)
t
fi
E
off
R
thJC
R
thCS
R
thJA
Inductive load, T
J
= 125°C
I
C
= 32A, V
GE
= 15V
V
CE
= 0.6 • V
CES
, R
G
= 2.7Ω
Inductive load, T
J
= 25°C
I
C
= 32A, V
GE
= 15V
V
CE
= 0.6 • V
CES
, R
G
= 2.7Ω
I
C
= 32A, V
GE
= 15V, V
CE
= 0.5 • V
CES
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 32A, V
CE
= 10V, Note 1
Characteristic Values
Min.
Typ.
Max.
20
30
4290
167
47
146
28
52
45
38
270
250
10.6
48
42
6.0
360
560
13.5
0.15
30
500
500
20
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.62 °C/W
°C/W
°C/W
ISOPLUS i4-Pak
TM
(HV) (IXGF) Outline
Notes: 1.
Pulse test, t < 300μs; duty cycle, d < 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGF32N170
Fig. 1. Output Characteristics
@ 25ºC
64
56
48
V
GE
= 17V
15V
13V
11V
240
210
180
9V
V
GE
= 17V
15V
Fig. 2. Extended Output Characteristics
@ 25ºC
13V
I
C
- Amperes
I
C
- Amperes
40
32
24
16
150
120
90
60
9V
7V
11V
7V
8
0
0.5
1.0
1.5
2.0
2.5
E
30
0
3.0
3.5
4.0
4.5
5.0
0
2
4
6
8
E
10
12
14
V
C
- Volts
V
C
- Volts
Fig. 3. Output Characteristics
@ 125ºC
64
56
48
V
GE
= 17V
15V
13V
11V
1.8
1.6
Fig. 4. Dependence of V
CE(sat)
on
Temperature
V
GE
= 15V
I
C
= 64A
1.4
1.2
1.0
0.8
0.6
I
C
= 32A
I
C
- Amperes
40
32
24
16
8
0
0
1
2
3
4
9V
7V
V
C E (sat)
- Normalized
I
C
= 16A
5
6
-50
-25
0
25
50
75
100
125
150
V
CE
- Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
8
7
6
T
J
= 25ºC
100
90
80
T
J
- Degrees Centigrade
Fig. 6. Input Admittance
I
C
- Amperes
70
60
50
40
30
20
T
J
= 125ºC
25ºC
- 40ºC
V
C E
- Volts
5
4
I
C
= 64A
32A
3
2
1
6
7
8
9
10
11
12
13
14
15
16
17
16A
10
0
4
5
6
7
8
9
10
V
G E
- Volts
V
G E
- Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_32N170 (7N)7-10-08-A
IXGF32N170
Fig. 7. Transconductance
45
40
35
T
J
= - 40ºC
25ºC
16
14
12
V
CE
= 850V
I
C
= 32A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
- Siemens
30
25
20
15
10
5
0
0
10
20
30
40
50
60
V
G E
- Volts
125ºC
10
8
6
4
2
0
70
80
90
100
0
20
40
60
80
100
120
140
160
I
C
- Amperes
Q
G
- nanoCoulombs
Fig. 9. Capacitance
10000
25
23
Fig. 10. Dependence of E
off
on R
G
Cies
Capacitance - p F
21
1000
Coes
100
E
off
- milliJoules
I
C
= 64A
T
J
= 125ºC
V
GE
= 1 5V
V
CE
= 1 0 2 0V
I
C
= 32A
19
17
15
13
11
9
0
f
= 1 MHz
10
0
5
10
15
20
E
Cres
25
30
35
40
I
C
= 16A
5
10
15
20
25
30
35
40
45
50
V
C
- Volts
R
G
- Ohms
Fig. 11. Dependence of E
off
on I
C
22
20
R
G
= 2.7Ω
R
G
= 1 5Ω
24
22
Fig. 12. Dependence of E
off
on
Temperature
R
G
= 2.7Ω
R
G
= 1 5Ω
I
C
= 64A
----
E
off
- milliJoules
T
J
= 125ºC
----
E
off
- MilliJoules
18
16
14
12
10
8
16
V
GE
= 1 5V
V
GE
= 1 0 2 0V
20
18
16
14
12
10
8
6
V
GE
= 15V
V
GE
= 10 2 0V
I
C
= 32A
T
J
= 25ºC
I
C
= 16A
20
24
28
32
36
C
40
44
48
52
56
60
64
I
- Amperes
25
35
45
55
65
75
85
95
105 115 125
T
J
- Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGF32N170
Fig. 13. Maximum Transient Thermal Impedance
1.00
Z
(th) J C
- (ºC/W)
0.10
0.01
0.00
0.00001
0.0001
0.001
Pulse Width - Seconds
0.01
0.1
1
10
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_32N170 (7N)7-10-08-A
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