Polar
TM
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFT16N120P
IXFH16N120P
V
DSS
I
D25
R
DS(on)
t
rr
= 1200V
= 16A
≤
950mΩ
Ω
≤
300ns
TO-268 (IXFT)
G
S
D
(Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
1200
1200
±
30
±
40
16
35
8
800
15
660
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
International Standard Packages
Fast Recovery Diode
Avalanche Rated
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Switch-mode and
Resonant-Mode Power Supplies
High Voltage Pulse Power Applications
High Voltage Discharge Circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
G
D
S
D
(Tab)
D
= Drain
Tab = Drain
TO-247 (IXFH)
G = Gate
S = Source
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
300
260
1.13 / 10
4
6
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1200
3.5
6.5
±200
V
V
nA
25
μA
2.5 mA
950 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2012 IXYS CORPORATION, All Rights Reserved
DS99896B(10/12)
IXFT16N120P
IXFH16N120P
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-247
0.21
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Gate Input Resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
11
17
6900
390
48
1.4
35
28
66
35
120
37
47
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.19
°C/W
°C/W
Terminals: 1 - Gate
3 - Source
2,4 - Drain
TO-268 Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 8A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
7.5
0.75
Characteristic Values
Min.
Typ.
Max.
16
64
1.5
300
A
A
V
ns
A
μC
1
2
3
TO-247 Outline
∅
P
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Note
1.
Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFT16N120P
IXFH16N120P
Fig. 1. Output Characteristics T
J
= @ 25ºC
16
14
12
V
GS
= 10V
8V
7V
24
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics T
J
= @ 25ºC
20
7V
I
D
- Amperes
I
D
- Amperes
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
16
12
6V
8
6V
4
5V
0
0
5
10
15
20
25
30
5V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics T
J
= @ 125ºC
16
14
12
V
GS
= 10V
8V
7V
2.8
Fig. 4. R
DS(on)
Normalized to I
D
= 8A Value vs.
Junction Temperature
V
GS
= 10V
2.4
R
DS(on)
- Normalized
2.0
I
D
= 16A
I
D
= 8A
I
D
- Amperes
10
6V
8
6
4
1.6
1.2
0.8
2
0
0
5
10
15
20
25
30
35
5V
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 8A Value vs.
Drain Current
2.4
2.2
2.0
V
GS
= 10V
T
J
= 125ºC
18
16
14
12
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
1.8
1.6
1.4
1.2
1.0
0.8
0
2
4
6
8
10
12
14
16
18
20
22
24
26
10
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved
IXFT16N120P
IXFH16N120P
Fig. 7. Input Admittance
16
14
12
T
J
= 125ºC
25ºC
- 40ºC
18
16
14
T
J
= - 40ºC
Fig. 8. Transconductance
10
8
6
4
2
0
3.5
4.0
4.5
5.0
g
f s
- Siemens
I
D
- Amperes
12
10
25ºC
125ºC
8
6
4
2
0
5.5
6.0
6.5
7.0
0
2
4
6
8
10
12
14
16
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
50
45
40
35
10
9
8
7
V
DS
= 600V
I
D
= 8A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
30
25
20
15
10
5
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
6
5
4
3
2
1
0
0
20
40
60
80
100
120
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1.2
Fig. 12. Breakdown and Threshold Voltages vs.
Junction Temperature
f
= 1 MHz
BV
DSS
& V
GS(th)
- Normalized
Capacitance - PicoFarads
10,000
Ciss
1.1
BV
DSS
1
1,000
Coss
0.9
V
GS(th)
0.8
100
Crss
10
0
5
10
15
20
25
30
35
40
0.7
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT16N120P
IXFH16N120P
Fig. 12. Maximum Transient Thermal Impedance
1.00
Fig. 13. Maximum Transient Thermal Impedance
0.30
aaa
0.10
Z
(th)JC
- ºC / W
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_16N120P(85) 09-12-12-B
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