Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Maker | Microsemi |
Parts packaging code | TO-3 |
package instruction | , |
Contacts | 2 |
Reach Compliance Code | compliant |
Configuration | Single |
Maximum drain current (Abs) (ID) | 8 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 198 W |
surface mount | NO |
APT751R2AN | APT751R4AN | APT801R2AN | APT801R4AN | |
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Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Maker | Microsemi | Microsemi | Microsemi | Microsemi |
Parts packaging code | TO-3 | TO-3 | TO-3 | TO-3 |
Contacts | 2 | 2 | 2 | 2 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
Configuration | Single | Single | Single | Single |
Maximum drain current (Abs) (ID) | 8 A | 7.5 A | 8 A | 7.5 A |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 198 W | 198 W | 198 W | 198 W |
surface mount | NO | NO | NO | NO |