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APT751R2AN

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size211KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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APT751R2AN Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

APT751R2AN Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeTO-3
package instruction,
Contacts2
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)198 W
surface mountNO

APT751R2AN Related Products

APT751R2AN APT751R4AN APT801R2AN APT801R4AN
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Maker Microsemi Microsemi Microsemi Microsemi
Parts packaging code TO-3 TO-3 TO-3 TO-3
Contacts 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant
Configuration Single Single Single Single
Maximum drain current (Abs) (ID) 8 A 7.5 A 8 A 7.5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 198 W 198 W 198 W 198 W
surface mount NO NO NO NO

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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