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BYG50G

Description
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC PACKAGE-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size36KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYG50G Overview

DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC PACKAGE-2, Signal Diode

BYG50G Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
Parts packaging codeDO-214AC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time2 µs
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D168
BYG50 series
Controlled avalanche rectifiers
Preliminary specification
1996 May 24
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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