Si3971DV
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.140 @ V
GS
=
−4.5
V
−12
0.200 @ V
GS
=
−2.5
V
0.300 @ V
GS
=
−1.8
V
FEATURES
I
D
(A)
−2.2
−1.8
−0.7
D
TrenchFETr Power MOSFETS
APPLICATIONS
D
Portable
−
PA Switch
−
Load Switch
TSOP-6
Top View
G1
3 mm
1
6
5
D1
G
1
S
1
S
2
S2
2
S1
G
2
G2
3
4
D2
2.85 mm
D
1
Ordering Information: Si3971DV-T1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 secs
Steady State
−12
"8
Unit
V
−2.2
−1.7
−8
−1.0
1.08
0.69
−55
to 150
−1.9
−1.5
A
−0.72
0.80
0.51
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72501
S-32271—Rev. A, 03-SNov-03
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
97
132
78
Maximum
115
155
95
Unit
_C/W
C/W
1
Si3971DV
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
=
−12
V, V
GS
= 0 V
V
DS
=
−12
V, V
GS
= 0 V, T
J
= 55_C
V
DS
p
−5
V, V
GS
=
−4.5
V
V
GS
=
−4.5
V, I
D
=
−2.2
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
−2.5
V, I
D
=
−1.8
A
V
GS
=
−1.8
V, I
D
=
−0.7
A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
=
−4.5
V, I
D
=
−2.2
A
I
S
=
−1.0
A, V
GS
= 0 V
−5
0.110
0.160
0.240
5
−0.75
−1.1
0.140
0.200
0.300
S
V
W
−0.40
−0.9
"100
−1
−5
V
nA
mA
A
Vishay Siliconix
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−1.0
A, di/dt = 100 A/ms
V
DD
=
−6
V, R
L
= 6
W
I
D
^
−1
A, V
GEN
=
−4.5
V, R
G
= 6
W
V
DS
=
−6
V, V
GS
=
−4.5
V, I
D
=
−2.2
A
3.4
0.5
0.85
7.6
28
55
40
30
25
45
85
60
50
45
ns
W
5
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
7
6
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
5
4
3
2
1.5 V
1
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
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1
0
0.0
2V
V
GS
= 5 thru 3 V
8
2.5 V
7
6
5
4
3
2
T
C
=
−55_C
25_C
125_C
Transfer Characteristics
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72501
S-32271—Rev. A, 03-SNov-03
2
Si3971DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
C
−
Capacitance (pF)
0.4
V
GS
= 1.8 V
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
V
GS
= 2.5 V
V
GS
= 4.5 V
Vishay Siliconix
On-Resistance vs. Drain Current
420
Capacitance
r
DS(on)
−
On-Resistance (
W
)
336
C
iss
252
168
C
oss
84
C
rss
0
0
3
6
9
12
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
6
V
GS
−
Gate-to-Source Voltage (V)
5
4
3
2
1
0
0.0
V
DS
= 6 V
I
D
= 2.2 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.2 A
r
DS(on)
−
On-Resistance (
W)
(Normalized)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1.4
1.2
1.0
0.8
0.5
1.0
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
0.5
On-Resistance vs. Gate-to-Source Voltage
r DS(on)
−
On-Resistance (
W
)
0.4
I
D
= 2.2 A
0.3
I
S
−
Source Current (A)
1
T
J
= 150_C
0.2
T
J
= 25_C
0.1
0.1
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
Document Number: 72501
S-32271—Rev. A, 03-SNov-03
0.0
0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
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3
Si3971DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.3
I
D
= 250
mA
0.2
V
GS(th)
Variance (V)
6
Power (W)
8
Vishay Siliconix
Single Pulse Power, Junction-to-Ambient
0.1
4
0.0
2
−0.1
−0.2
−50
0
−25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
30
T
J
−
Temperature (_C)
10
Safe Operating Area, Junction-to-Case
Limited by r
DS(on)
1 ms
I
D
−
Drain Current (A)
1
10 ms
100 ms
0.1
T
C
= 25_C
Single Pulse
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
1s
10 s
dc
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 132_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 72501
S-32271—Rev. A, 03-SNov-03
4
Si3971DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72501
S-32271—Rev. A, 03-SNov-03
www.vishay.com
5
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