UNISONIC TECHNOLOGIES CO., LTD
2SB772
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC
2SB772
is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
PNP SILICON TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882
Lead Free:1
Halogen Free:
2SB772L
2SB772G
ORDERING INFORMATION
Normal
2SB772-x-T60-K
2SB772-x-T6C-K
2SB772-x-TM3-T
2SB772-x-TN3-R
2SB772-x-T9N-B
2SB772-x-T9N-K
Ordering Number
Lead Free
2SB772L-x-T60-K
2SB772L-x-T6C-K
2SB772L-x-TM3-T
2SB772L-x-TN3-R
2SB772L-x-T9N-B
2SB772L-x-T9N-K
Halogen Free
2SB772G-x-T60-K
2SB772G-x-T6C-K
2SB772G-x-TM3-T
2SB772G-x-TN3-R
2SB772G-x-T9N-B
2SB772G-x-T9N-K
Package
TO-126
TO-126C
TO-251
TO-252
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Bulk
Bulk
Tube
Tape Reel
Tape Box
Bulk
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Copyright © 2009 Unisonic Technologies Co., Ltd
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2SB772
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
(
Ta=25
℃)
TO-92NL
TO-251/TO-252/
TO-126/TO-126C
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
PNP SILICON TRANSISTOR
RATINGS
-40
-30
-5
-3
-7
-0.6
0.5
1
UNIT
V
V
V
A
A
A
W
W
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE1
DC Current Gain(Note 1)
h
FE2
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
V
BE(SAT)
Current Gain Bandwidth Product
f
T
Output Capacitance
Cob
Note 1: Pulse test: P
W
<300μs, Duty Cycle<2%
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-30V ,I
E
=0
V
CE
=-30V ,I
B
=0
V
EB
=-3V, I
C
=0
V
CE
=-2V, I
C
=-20mA
V
CE
=-2V, I
C
=-1A
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-5V, I
C
=-0.1A
V
CB
=-10V, I
E
=0,f=1MHz
MIN
-40
-30
-5
TYP
MAX
UNIT
V
V
V
nA
nA
nA
-1000
-1000
-1000
30
100
200
150
-0.3
-1.0
80
45
400
-0.5
-2.0
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100 ~ 200
P
160 ~ 320
E
200 ~ 400
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2SB772
■
TYPICAL CHARACTERICS
Static Characteristics
PNP SILICON TRANSISTOR
Derating Curve of Safe Operating Areas
150
1.6
-Collector Current, Ic (A)
-I
B
=9mA
- Ic Derating (%)
-I
B
=8mA
-I
B
=7mA
1.2
100
-I
B
=6mA
-I
B
=5mA
S/
b
lim
0.8
ite
d
ss
Di
-I
B
=4mA
-I
B
=3mA
0.4
tio
ipa
50
n
d
ite
lim
-I
B
=2mA
-I
B
=1mA
0
0
4
8
12
16
20
0
-50
0
50
100
150
200
-Collector-Emitter voltage (V)
Case Temperature, Tc (
℃
)
Power Derating
10
12
3
Collector Output Capacitance
Output Capacitance(pF)
Power Dissipation(W)
8
10
2
I
E
=0
f=1MHz
4
10
1
0
-50
0
50
100
150
200
10
0
10
0
10
-1
10
-2
10
-3
Case Temperature, Tc (
℃
)
-Collector-Base Voltage(v)
Current Gain-
Bandwidth Product
10
3
10
1
Safe Operating Area
Ic(max),Pulse
S
1m
0.
10
mS
1m
S
Ic(max),DC
Current Gain-
Bandwidth Product, f
T
(MHz)
V
CE
=5V
-Collector Current, Ic (A)
10
2
10
0
I
B
=8mA
10
1
10
-1
10
0
10
-2
10
-1
10
0
10
1
10
-2
10
0
10
1
10
2
Collector Current, Ic (A)
Collector-Emitter Voltage
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2SB772
■
TYPICAL CHARACTERICS(Cont.)
PNP SILICON TRANSISTOR
DC Current Gain
3
10
4
10
Saturation Voltage
V
CE
=-2V
DC Current Gain, h
FE
2
10
-Saturation Voltage (mV)
3
10
V
BE(SAT)
2
10
1
10
V
CE(SAT)
1
10
0
10
0
10
1
10
2
10
3
10
4
10
0
10
0
10
1
10
2
10
3
10
4
10
-Collector Current, Ic (mA)
-Collector Current, Ic (mA)
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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