4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Motorola ( NXP ) |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LEADFORM OPTIONS ARE AVAILABLE |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 4 A |
| Maximum drain current (ID) | 4 A |
| Maximum drain-source on-resistance | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 25 pF |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 20 W |
| Maximum power dissipation(Abs) | 20 W |
| Maximum pulsed drain current (IDM) | 16 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 45 ns |
| Maximum opening time (tons) | 45 ns |
| IRF510 | IRF512 | IRF511 | IRF513 | |
|---|---|---|---|---|
| Description | 4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 3.5A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 4A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 3.5A, 60V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Other features | LEADFORM OPTIONS ARE AVAILABLE | LEADFORM OPTIONS ARE AVAILABLE | LEADFORM OPTIONS ARE AVAILABLE | LEADFORM OPTIONS ARE AVAILABLE |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 60 V | 60 V |
| Maximum drain current (Abs) (ID) | 4 A | 4.9 A | 5.6 A | 4.9 A |
| Maximum drain current (ID) | 4 A | 3.5 A | 4 A | 3.5 A |
| Maximum drain-source on-resistance | 0.6 Ω | 0.8 Ω | 0.6 Ω | 0.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 25 pF | 25 pF | 25 pF | 25 pF |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 20 W | 20 W | 20 W | 20 W |
| Maximum power dissipation(Abs) | 20 W | 43 W | 43 W | 43 W |
| Maximum pulsed drain current (IDM) | 16 A | 14 A | 16 A | 14 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 45 ns | 45 ns | 45 ns | 45 ns |
| Maximum opening time (tons) | 45 ns | 45 ns | 45 ns | 45 ns |
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