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MAX2374EBT+T

Description
Wide Band Low Power Amplifier, 750MHz Min, 1000MHz Max, UCSP, 6 PIN
CategoryWireless rf/communication    Radio frequency and microwave   
File Size128KB,8 Pages
ManufacturerMaxim
Websitehttps://www.maximintegrated.com/en.html
Environmental Compliance  
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MAX2374EBT+T Overview

Wide Band Low Power Amplifier, 750MHz Min, 1000MHz Max, UCSP, 6 PIN

MAX2374EBT+T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMaxim
Reach Compliance Codecompliant
Characteristic impedance50 Ω
structureCOMPONENT
Gain12.5 dB
Maximum input power (CW)10 dBm
Maximum operating frequency1000 MHz
Minimum operating frequency750 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum voltage standing wave ratio10

MAX2374EBT+T Preview

19-1614; Rev 0; 6/00
UAL
IT MAN
TION K
A
SHEET
EVALU
S DATA
W
FOLLO
SiGe, Variable IIP3, Low-Noise Amplifier
in UCSP Package
General Description
Features
o
+2.7V to +5.5V Single Supply
o
Low Operating Current
8.5mA for High Linearity
4.5mA for Paging
4.1mA in Low-Gain, High-Linearity Mode
o
Low Noise Figure: 1.5dB Cellular
o
Adjustable IIP3
o
Two Gain Settings
o
< 1µA Shutdown Mode
o
Ultra-Small 6-Bump UCSP (1mm x 1.5mm)
MAX2374
The MAX2374 silicon-germanium (SiGe), switchable-
gain, variable-linearity, low-noise amplifier (LNA) is
designed for cellular-band, code-division multiple-
access (CDMA). It can be used for applications such
as TDMA and PDC or wherever high dynamic range
and low noise are required. This LNA provides a high
intermodulation intercept point (IIP3), which is
adjustable to meet specific system requirements by
selecting an appropriate external resistor. To achieve
high gain and low noise, the LNA is packaged in a tiny
ultra-chip-scale package (UCSP) with six solder
bumps. The LNA operates from a +2.7V to +5.5V single
supply and consumes just 8.5mA while achieving a
+6.2dBm input IIP3. Supply current reduces to less
than 1µA in shutdown mode.
The MAX2374 provides two gain modes. High-gain
mode optimizes system sensitivity, while low-gain mode
optimizes system linearity.
Applications
CDMA Phones
TDMA Phones
Wireless Local Loop (WLL)
GSM Handsets
Land Mobile Radio
Wireless Data
Pin Configuration appears at end of data sheet.
MAX2374EBT
PART
Ordering Information
TEMP. RANGE
-40°C to +85°C
PIN-
PACKAGE
6 UCSP*
TOP
MARK
AAB
*UCSP
reliability is integrally linked to the user’s assembly
methods, circuit board material, and environment. Refer to the
UCSP Reliability Notice in the UCSP Reliability section of this
data sheet for more information.
Typical Application Circuit
V
CC
= + 2.75V
100pF
A3
GND
V
CC
B3
8.2nH
B2
V
CC
5pF
LNA INPUT
0.01µF
A2
MAX2374
LNAIN
LNAOUT
2pF
LNA OUTPUT
A1
6.8nH
GAIN-CONTROL
LOGIC OUTPUT
GAIN
BIAS
B1
R
BIAS
________________________________________________________________
Maxim Integrated Products
1
For free samples and the latest literature, visit www.maxim-ic.com or phone 1-800-998-8800.
For small orders, phone 1-800-835-8769.
SiGe, Variable IIP3, Low-Noise Amplifier
in UCSP Package
MAX2374
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND ...........................................................-0.3V to +6.0V
GAIN, BIAS Voltage to GND...................-0.3V to (V
CC
+ 0.3V)
GAIN, BIAS Current ......................................................±10mA
RF Input Power
LNAIN .........................................................................+10dBm
LNAOUT to GND ....................................-0.3V to (V
CC
+ 0.6V)
Continuous Power Dissipation (T
A
= +85°C) ...................540mW
Operating Temperature Range
MAX2374 .........................................................-40°C to +85°C
Storage Temperature.........................................-65°C to +150°C
Junction Temperature ......................................................+150°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +2.7V to +5.5V, R
BIAS
= 20kΩ, V
GAIN
= high, LNAOUT = V
CC
, no input signals at LNAIN, T
A
= -40°C to +85°C. Typical values
are at V
CC
= +2.75V, T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SUPPLY
Supply Voltage
V
CC
= 2.75V
V
CC
= 5.5V
Supply Current
R
BIAS
= 10kΩ
R
BIAS
= 43kΩ
GAIN = 0.6V, V
CC
= 2.75V
Shutdown Supply Current
GAIN CONTROL INPUT
Input Logic Voltage High
Input Logic Voltage Low
Input Current
BIAS Pin Voltage (Note 2)
-5
V
CC
-
1.16
1.5
0.6
5
V
V
µA
V
BIAS = open circuit
2.7
8.5
10.5
15
4.5
4.5
0.1
5.5
1
µA
mA
5.5
10.5
V
CONDITIONS
MIN
TYP
MAX
UNITS
AC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= +2.7V to +5.5V, P
LNAIN
= -30dBm, V
GAIN
= high, f
LNAIN
= 881MHz, R
BIAS
= 20kΩ, T
A
= +25°C.
Typical values are at V
CC
= +2.75V, unless otherwise noted.) (Note 2)
PARAMETER
Recommended Operating Frequency
Range (Note 3)
Input and Output Return Loss
Reverse Isolation
Output 1dB Compression
Maximum Stable Load VSWR
Input and output ports externally matched to 50Ω
V
GAIN
= high
V
GAIN
= low
V
CC
= 2.75V
All modes, f
6.5GHz
V
GAIN
= high
V
GAIN
= low
10:1
CONDITIONS
MIN
750
14
-20
-9
6
-3.5
TYP
MAX
1000
UNITS
MHz
dB
dB
dBm
2
_______________________________________________________________________________________
SiGe, Variable IIP3, Low-Noise Amplifier
in UCSP Package
AC ELECTRICAL CHARACTERISTICS (continued)
(Typical
Application Circuit,
V
CC
= +2.7V to +5.5V, P
LNAIN
= -30dBm, V
GAIN
= high, f
LNAIN
= 881MHz, R
BIAS
= 18kΩ, T
A
= +25°C.
Typical values are at V
CC
= +2.75V, unless otherwise noted.) (Note 2)
PARAMETER
HIGH-GAIN MODE
(GAIN = V
CC
)
Gain
Noise Figure
Input Third-Order Intercept Point (Note 4)
LOW-GAIN MODE
(GAIN = GND)
Gain
Noise Figure
R
BIAS
= 10kΩ
Input Third-Order Intercept Point (Note 4)
MAX2374
R
BIAS
= 20kΩ
R
BIAS
= 43kΩ
Note 1:
Note 2:
Note 3:
Note 4:
5.8
T
A
= -40°C to +85°C
T
A
= +25°C
T
A
= -40°C to +85°C
0.4
-1
3
10.5
7.2
1
dBm
1.2
2
3.5
3.5
dB
dB
T
A
= +25°C
T
A
= -40°C to +85°C
V
CC
= 2.75V
R
BIAS
= 10kΩ
MAX2374
R
BIAS
= 20kΩ
R
BIAS
= 43kΩ
4.5
13.8
12.5
1.5
7.2
6.2
4.2
dBm
15
15.6
17
1.7
dB
dB
CONDITIONS
MIN
TYP
MAX
UNITS
MAX2374
Production tested at T
A
= +25°C. Maximum and minimum limits are guaranteed by design and characterization.
Guaranteed by design and characterization.
Operation over this frequency range is possible with a matching network tuned to the desired operating frequency.
Measured with two-tone test with P
LNAIN
= -25dBm per tone, f1 = 881MHz, f2 = 881.9MHz.
Typical Operating Characteristics
(Typical
Application Circuit,
V
CC
= +2.7V to +5.5V, P
LNAIN
= -30dBm, f
LNAIN
= 881MHz, R
BIAS
= 20kΩ, T
A
= +25°C, unless other-
wise noted.)
I
CC
vs. V
CC
AND TEMPERATURE
MAX2374-01
S21, S11, S22, S12 vs. FREQUENCY
MAX2374-03
S21, S11, S22, S12 vs. FREQUENCY
V
CC
= 2.75V
GAIN = GND
MAX2374-04
12
T
A
= +85°C T
A
= +25°C
10
R
BIAS
= 20kΩ
20
V
CC
= GAIN = 2.75V
5
10
S21
MAGNITUDE (dB)
0
S11
-10
S22
MAGNITUDE (dB)
0
S22
-5
S21
I
CC
(mA)
8
GAIN = V
CC
T
A
= -40°C
T
A
= -40°C
-10
S12
6
T
A
= +85°C T
A
= +25°C
GAIN = GND
-20
S12
-15
S11
4
2.5
3.0
3.5
4.0
V
CC
(V)
4.5
5.0
5.5
-30
750
800
850
900
950
1000
FREQUENCY (MHz)
-20
750
800
850
900
950
1000
FREQUENCY (MHz)
_______________________________________________________________________________________
3
SiGe, Variable IIP3, Low-Noise Amplifier
in UCSP Package
MAX2374
Typical Operating Characteristics (continued)
(Typical
Application Circuit,
V
CC
= +2.7V to +5.5V, P
LNAIN
= -30dBm, f
LNAIN
= 881MHz, R
BIAS
= 20kΩ, T
A
= +25°C, unless other-
wise noted.)
GAIN vs. R
BIAS
AND TEMPERATURE
MAX2374-05
IIP3 vs. R
BIAS
AND TEMPERATURE
A
B
15
= V
GAIN
= GND
= V
GAIN
= V
CC
T
A
= +85°C
A
10
T
A
= -40°C
B
5
B
0
V
CC
= 2.75V,
f = 881MHz, 882MHz
T
A
= +25°C
T
A
= -40°C
MAX2374-06
20
T
A
= -40°C
15
GAIN = V
CC
10
T
A
= +85°C
T
A
= +25°C
20
V
CC
= 2.75V
T
A
= -40°C
T
A
= +85°C
GAIN = GND
T
A
= +25°C
5
IIP3 (dBm)
GAIN (dB)
T
A
= +25°C
T
A
= +85°C
0
5
15
25
R
BIAS
(kΩ)
35
45
0
20
R
BIAS
(kΩ)
40
60
NOISE FIGURE vs. FREQUENCY
MAX2374-07
CURRENT vs. VOLTAGE AND R
BIAS
R
BIAS
= 10kΩ, GAIN = V
CC
15
R
BIAS
= 10kΩ, GAIN = GND
R
BIAS
= 20kΩ, GAIN = V
CC
I
CC
(mA)
10
MAX2374-08
4.5
4.0
NOISE FIGURE (dB)
3.5
3.0
2.5
2.0
GAIN = V
CC
1.5
1.0
750
800
850
900
950
20
V
CC
= 2.75V
5
R
BIAS
= 43kΩ, GAIN = V
CC
R
BIAS
= 20kΩ, GAIN = GND
R
BIAS
= 43kΩ, GAIN = GND
0
1000
2.5
3.0
3.5
4.0
V
CC
(V)
4.5
5.0
5.5
FREQUENCY (MHz)
Pin Description
PIN
A3
A2
A1
B1
B2
B3
4
NAME
GND
LNAIN
GAIN
BIAS
LNAOUT
V
CC
Ground
LNA Input Port. Blocking capacitor is required, which may be used as part of the matching network.
Gain-Control Logic Input. Drive high for high-gain mode. Drive low for low-gain mode.
LNA Bias Setting Pin. For nominal bias, connect 20kΩ resistor to V
CC
. Adjust the resistor value to alter the
linearity of the LNA.
LNA Output Port. This port requires an external pullup inductor, which may be used as part of the matching
network.
Supply Voltage Input. Bypass with a 100pF capacitor to GND.
FUNCTION
_______________________________________________________________________________________
SiGe, Variable IIP3, Low-Noise Amplifier
in UCSP Package
MAX2374
Table 1a. S-Parameters (V
CC
= V
GAIN
= 2.75V)
FREQ (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
S11
MAGNITUDE
0.929
0.728
0.571
0.524
0.529
0.568
0.612
0.639
0.652
0.664
0.691
0.716
0.72
ANGLE
-11.89
-49
-77.5
-101
-123.7
-145.2
-165
176
163
149
139
125
111.5
12.84
9.83
6.19
4.21
3.12
2.38
1.77
1.46
1.07
1.01
0.892
0.781
0.662
S21
MAGNITUDE
ANGLE
-151.3
122.73
79.42
49.35
24.18
1
-19.2
-35
-51
-60.5
-77
-91.7
-104
0.007
0.026
0.041
0.053
0.06
0.063
0.057
0.061
0.094
0.161
0.1
0.078
0.074
S12
MAGNITUDE
ANGLE
123.5
69
47.6
33.3
21
11.19
5.042
15
17
-12.9
-45.4
-37
-33.3
0.908
0.842
0.728
0.68
0.671
0.68
0.704
0.732
0.697
0.626
0.689
0.693
0.686
S22
MAGNITUDE
ANGLE
78.8
-20.2
-54.8
-81
-105
-128
-150
-171
162
158.7
146.5
128
110
Table 1b. S-Parameters (V
CC
= 2.75V, V
GAIN
= GND)
FREQ (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
S11
MAGNITUDE
0.987
0.916
0.8
0.75
0.754
0.782
0.803
0.811
0.797
0.739
0.745
0.701
0.591
ANGLE
-8.93
-42.4
-77
-106
-132.7
-158
180
159.5
141.5
126.3
112
92.4
73
1.25
1.21
1
0.772
0.583
0.429
0.301
0.228
0.148
0.196
0.156
0.096
0.112
S21
MAGNITUDE
ANGLE
-148.7
128.8
72.4
28.18
-6.87
-34.5
-54
-66
-66
-62
-89
-83
-73.48
0.01
0.06
0.14
0.189
0.2
0.184
0.146
0.117
0.096
0.175
0.123
0.082
0.103
S12
MAGNITUDE
ANGLE
127
85.7
52.2
19.6
-9.33
-30.7
-47
-53.4
-42.5
-47
-77.2
-63.3
-62.8
0.374
0.471
0.596
0.659
0.689
0.694
0.695
0.681
0.629
0.534
0.623
0.6
0.566
S22
MAGNITUDE
ANGLE
85.8
1.23
-42
-82
-117.3
-147.5
-173
164.6
141.7
140
126.35
103.2
85.8
_______________________________________________________________________________________
5

MAX2374EBT+T Related Products

MAX2374EBT+T MAX2374EBT+
Description Wide Band Low Power Amplifier, 750MHz Min, 1000MHz Max, UCSP, 6 PIN Wide Band Low Power Amplifier, 750MHz Min, 1000MHz Max, UCSP, 6 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Maxim Maxim
Reach Compliance Code compliant compliant
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 12.5 dB 12.5 dB
Maximum input power (CW) 10 dBm 10 dBm
Maximum operating frequency 1000 MHz 1000 MHz
Minimum operating frequency 750 MHz 750 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER
Maximum voltage standing wave ratio 10 10

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