K1S3216BCD-FI850 datasheet, PDF

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K1S3216BCD-FI850: DescriptionPseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48; Categorystorage storage; File Size168KB，10 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K1S3216BCD-FI850 Overview

Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48

K1S3216BCD-FI850 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA, BGA48,6X8,30
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	85 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
length	8 mm
memory density	33554432 bit
Memory IC Type	PSEUDO STATIC RAM
memory width	16
Number of functions	1
Number of terminals	48
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.85 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	6 mm

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K1S3216BCD

Document Title

2Mx16 bit Page Mode Uni-Transistor Random Access Memory

UtRAM

Revision History

Revision No. History

0.0

1.0

Initial Draft

Finalize

Draft Date

Remark

November 02, 2004 Preliminary

Apri 06, 2005

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

-1-

Revision 1.0

April 2005

K1S3216BCD-FI850 Related Products

	K1S3216BCD-FI850	K1S3216BCD-FI700	K1S3216BCD-FI70	K1S3216BCD-FI85
Description	Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48	Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	VFBGA, BGA48,6X8,30	VFBGA, BGA48,6X8,30	VFBGA, BGA48,6X8,30	VFBGA, BGA48,6X8,30
Reach Compliance Code	compliant	compliant	compliant	compliant
Maximum access time	85 ns	70 ns	70 ns	85 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
length	8 mm	8 mm	8 mm	8 mm
memory density	33554432 bit	33554432 bit	33554432 bit	33554432 bit
Memory IC Type	PSEUDO STATIC RAM	PSEUDO STATIC RAM	PSEUDO STATIC RAM	PSEUDO STATIC RAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	48	48	48	48
word count	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	2MX16	2MX16	2MX16	2MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA	VFBGA
Encapsulate equivalent code	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	240	225	225
power supply	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	1 mm	1 mm	1 mm
Maximum standby current	0.0001 A	0.0001 A	0.0001 A	0.0001 A
Maximum slew rate	0.035 mA	0.035 mA	0.035 mA	0.035 mA
Maximum supply voltage (Vsup)	2 V	2 V	2 V	2 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.85 V	1.85 V	1.85 V	1.85 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	30	30	NOT SPECIFIED	NOT SPECIFIED
width	6 mm	6 mm	6 mm	6 mm

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