Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2
Parameter Name | Attribute value |
Maker | Compensated Devices Inc. |
package instruction | HERMETIC SEALED, GLASS, LL41, MELF-2 |
Reach Compliance Code | unknown |
Other features | METALLURGICALLY BONDED |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JEDEC-95 code | DO-213AB |
JESD-30 code | O-LELF-R2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
Maximum output current | 1 A |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 30 V |
surface mount | YES |
technology | SCHOTTKY |
Terminal surface | TIN LEAD |
Terminal form | WRAP AROUND |
Terminal location | END |
CDLL1A30 | CDLL1A40 | CDLL5818 | CDLL1A20 | CDLL5817 | CDLL1A70 | |
---|---|---|---|---|---|---|
Description | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2 | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2 | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2 | Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2 | Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2 | Rectifier Diode, Schottky, 1 Element, 1A, 70V V(RRM), Silicon, |
Maker | Compensated Devices Inc. | Compensated Devices Inc. | Compensated Devices Inc. | Compensated Devices Inc. | Compensated Devices Inc. | Compensated Devices Inc. |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 code | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
Maximum output current | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 30 V | 40 V | 30 V | 20 V | 20 V | 70 V |
surface mount | YES | YES | YES | YES | YES | YES |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND |
Terminal location | END | END | END | END | END | END |
package instruction | HERMETIC SEALED, GLASS, LL41, MELF-2 | HERMETIC SEALED, GLASS, LL41, MELF-2 | HERMETIC SEALED, GLASS, LL41, MELF-2 | HERMETIC SEALED, GLASS, LL41, MELF-2 | HERMETIC SEALED, GLASS, LL41, MELF-2 | - |
Other features | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | - |
JEDEC-95 code | DO-213AB | DO-213AB | DO-213AB | DO-213AB | DO-213AB | - |