CMBT3904E NPN
CMBT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMBT3904E
(NPN) and CMBT3906E (PNP) are general purpose
transistors with enhanced specifications. These
devices are ideal for applications where ultra small
size and power dissipation are the prime requirements.
Packaged in the
FEMTOmini™
SOT-923 package,
these transistors provide performance characteristics
suitable for the most demanding size constrained
applications.
MARKING CODES: CMBT3904E: B
CMBT3906E: G
APPLICATIONS
• DC / DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered applications including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
60
40
6.0
200
100
-65 to +150
1250
UNITS
V
V
V
mA
mW
°C
°C/W
SOT-923 CASE
FEATURES
• Very Small Package Size
• 200mA Collector Current
• Low VCE(SAT) (0.1V Typ @ 50mA)
• Miniature 0.8 x 0.6 x 0.4mm
Ultra Low height profile
FEMTOmini™
Surface Mount Package
♦
Collector-Base Voltage
♦
Emitter-Base Voltage
MAXIMUM RATINGS:
(TA=25°C)
Collector-Emitter Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
ICEV
BVCEO
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
MIN
60
40
6.0
NPN
TYP
115
60
7.5
0.057
0.100
PNP
TYP
90
55
7.9
0.050
0.100
0.750
0.850
MAX
50
UNITS
nA
V
V
V
♦
BVCBO
♦
BVEBO
♦
VCE(SAT)
♦
VCE(SAT)
VBE(SAT)
VBE(SAT)
0.100
0.200
0.850
0.950
V
V
V
V
0.650
0.750
0.850
♦
Enhanced specification.
R1 (8-January 2010)
CMBT3904E NPN
CMBT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued:
SYMBOL TEST CONDITIONS
NPN
TYP
130
150
150
120
55
MHz
4.0
8.0
1.0
0.1
100
1.0
12
10
400
60
4.0
35
35
200
50
μS
dB
ns
ns
ns
ns
pF
pF
kΩ
X10
-4
300
PNP
MAX
MIN
90
100
100
70
30
300
TYP
240
235
215
110
50
UNITS
♦
hFE
♦
hFE
♦
hFE
hFE
fT
Cob
Cib
hie
hre
hfe
hoe
NF
td
tr
ts
tf
hFE
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS =1.0kΩ,
f=10Hz to 15.7kHz
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
♦
Enhanced specification.
SOT-923 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMBT3904E: B
CMBT3906E: G
R1 (8-January 2010)
w w w. c e n t r a l s e m i . c o m