Standard SRAM, 256X4, 130ns, CMOS, CDIP22,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Plessey Semiconductors Ltd. |
| package instruction | DIP, DIP22,.4 |
| Reach Compliance Code | unknown |
| Maximum access time | 130 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-CDIP-T22 |
| JESD-609 code | e0 |
| memory density | 1024 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 22 |
| word count | 256 words |
| character code | 256 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256X4 |
| Output characteristics | 3-STATE |
| Exportable | YES |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.4 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.00075 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.03 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| total dose | 30k Rad(Si) V |
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