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MF32M0-M6DAP01

Description
SRAM Card, 2MX8, 200ns, MOS
Categorystorage    storage   
File Size250KB,8 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

MF32M0-M6DAP01 Overview

SRAM Card, 2MX8, 200ns, MOS

MF32M0-M6DAP01 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instruction,
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time200 ns
JESD-30 codeX-XXMA-X60
memory density16777216 bit
Memory IC TypeSRAM CARD
memory width8
Number of functions1
Number of ports1
Number of terminals60
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature50 °C
Minimum operating temperature
organize2MX8
Output characteristics3-STATE
ExportableYES
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Minimum standby current2.6 V
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED

MF32M0-M6DAP01 Related Products

MF32M0-M6DAP01 MF31M0-M6DAP01 MF32M0-M6DAP00 MF31M0-M6DAP00
Description SRAM Card, 2MX8, 200ns, MOS SRAM Card, 1MX8, 200ns, MOS SRAM Card, 2MX8, 200ns, MOS SRAM Card, 1MX8, 200ns, MOS
Maker Mitsubishi Mitsubishi Mitsubishi Mitsubishi
Reach Compliance Code unknown unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 200 ns 200 ns 200 ns 200 ns
JESD-30 code X-XXMA-X60 X-XXMA-X60 X-XXMA-X60 X-XXMA-X60
memory density 16777216 bit 8388608 bit 16777216 bit 8388608 bit
Memory IC Type SRAM CARD SRAM CARD SRAM CARD SRAM CARD
memory width 8 8 8 8
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 60 60 60 60
word count 2097152 words 1048576 words 2097152 words 1048576 words
character code 2000000 1000000 2000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 50 °C 50 °C 50 °C 50 °C
organize 2MX8 1MX8 2MX8 1MX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Exportable YES YES YES YES
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Minimum standby current 2.6 V 2.6 V 2.6 V 2.6 V
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology MOS MOS MOS MOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
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