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2SD1409A_09

Description
High Voltage Switching Applications
File Size143KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SD1409A_09 Overview

High Voltage Switching Applications

2SD1409A
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (Darlington)
2SD1409A
High Voltage Switching Applications
Industrial Applications
Unit: mm
High DC current gain: h
FE
= 600 (min.) (VCE = 2 V, I
C
= 2 A)
Monolithic construction with built-in base-emitter shunt resistor
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
600
400
5
6
1
2.0
25
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 2.5 kΩ
≈ 200 Ω
Emitter
1
2009-12-21

2SD1409A_09 Related Products

2SD1409A_09 2SD1409A
Description High Voltage Switching Applications High Voltage Switching Applications

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