MUN5211DW Series
Surface Mount Dual Bias Resistor Transistor
6
NPN Silicon
P b
Lead(Pb)-Free
Q
2
R
2
R
1
5
R
1
R
2
4
6 5
4
Q
1
2
3
1
2
3
1
SOT-363(SC-88)
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Symbol
VCEO
VCBO
IC
NPN+NPN
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
(1)
Total Device Dissipation T
A
=25 C
Symbol
PD
Max
187
(2)
256
(3)
1.5
(2)
2.0
(3)
Unit
mW
mW/ C
C/W
C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
1.One Junction Heated
2.FR-4 @ Minimum Pad
3.FR-4 @ 1.0
I
1.0 Inch Pad
R
θ
JA
TJ,Tstg
670
(2)
490
(3)
-55 to +150
Device Marking and Resistor Values
Device
MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
I
Marking
7A
7B
7C
7D
7E
7F
7G
R1(K)
10
22
47
10
10
4.7
1.0
R2(K)
10
22
47
47
8 8
Device
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
Marking
7H
7J
7K
7L
7M
7N
7P
R1(K)
2.2
4.7
4.7
22
2.2
100
47
R2(K)
2.2
4.7
47
47
47
100
22
1.0
WEITRON
http://www.weitron.com.tw
1/9
Rev.B 09-Jun-08
MUN5211DW Series
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
Symbol
Min
Max
Unit
Characteristics
Off C har acter istics
Collector-Base Cutoff Current (V
CB
=50Vdc, I E =0)
Collector-Emitter Cutoff Current(VCE=50Vdc, IB =0)
Emitter-Base Cutoff Current (VEB =6.0Vdc, I
C
=0) MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
Collector-Base Breakdown Voltage (I C =10uAdc, IE =0)
Collector-Emitter Breakdown Voltage(4) (I C=2.0mA, I B=0)
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
I CBO
I CEO
I EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
-
-
nAdc
nAdc
mAdc
V(BR)CBO
V(BR)CEO
50
50
Vdc
Vdc
WEITRON
2/9
Rev.A 29-Dec-05
MUN5211DW Series
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
Max
Unit
On Characteristics
(4)
DC Current Gain
(IC= 5.0 mAdc, VCE=10Vdc)
MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
HFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
-
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 0.3mAdc)
(IC= 10 mAdc, IB= 5.0mAdc)
MUN5230DW/MUN5231DW
(IC= 10 mAdc, IB= 1.0mAdc)
MUN5215DW/MUN5216DW
VCE(sat)
0.25
Vdc
MUN5232DW/MUN5233DW/MUN5234DW
Output Voltage (on)
(VCC = 5.0 V, VB= 2.5V, R L =1.0 k )
(VCC = 5.0 V, VB= 3.5V, RL =1.0 k )
(VCC = 5.0 V, VB= 5.5V, RL =1.0 k )
(VCC = 5.0 V, VB= 4.0V, R L =1.0 k )
Output Voltage (off )
(VCC = 5.0 V, VB= 0.5V, R L =1.0 k )
(VCC = 5.0 V, VB= 0.05V, R L =1.0 k )
(VCC = 5.0 V, VB= 0.25V, R L =1.0 k )
MUN5211DW
MUN5212DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5213DW
MUN5236DW
MUN5237DW
VOL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
-
Vdc
VOL
4.9
Vdc
MUN5230DW
MUN5215DW
MUN5216DW
MUN5233DW
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
WEITRON
3/9
Rev.A 29-Dec-05
MUN5211DW Series
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
Max
Unit
On Characteristics
(5)
Input Resistor
MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
k
Resistor Ratio
MUN5211DW/MUN5212DW
MUN5213DW/MUN5236DW
MUN5214DW
MUN5215DW/MUN5216DW
MUN5230DW/MUN5231DW/MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5237DW
R1/R2
5. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
WEITRON
4/9
Rev.A 29-Dec-05
MUN5211DW Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5211DW
300
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
P
D
, P OWE R DIS S IPAT ION (mW)
250
200
150
100
50
0
- 50
R
θJ
A
= 833 C /W
0
50
100
T
A
, AMB IE NT T E MP E R AT UR E ( C )
150
1
I
C
/I
B
= 10
T
A
= -25 C
25 C
0.1
75 C
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (m A)
50
FIG 1. Derating Curve
1000
V
CE
= 10 V
Cob , CAPACITANCE (pF)
T
A
= 75 C
25 C
-25 C
100
3
4
FIG 2. V
CE(sat)
versus I
C
hFE , DC CURRENT GAIN (NORMALIZED)
f = 1 MHz
I
E
= 0 V
T
A
= 25 C
2
1
10
1
10
I
C
, COLLECTOR CURRENT (m A)
100
0
0
10
20
30
40
V
R
, REVERSE BIAS VOL TAGE (VOLTS)
50
FIG 3. DC Current Gain
100
75 C
IC, COLLECTOR CURRENT (mA)
10
25 C
T
A
= -25 C
10
V
O
= 0.2 V
V in, INPUT VOLTAGE (VOLTS)
FIG 4. Output Capacitance
T
A
= -25 C
25 C
75 C
1
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0.001
0.1
0
10
40
20
30
I
C
, COLLECTOR CURRENT (m A)
50
FIG 5. Output Current versus Input Voltage
FIG 6. Input Voltage versus Output Current
WEITRON
5/9
Rev.A 29-Dec-05
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