Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SC2336,
2SC2336A,2SC2336B
APPLICATIONS
·Audio
frequency power amplifier
·
High frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SA1006
V
CBO
Collector-base voltage
2SA1006A
2SA1006B
2SA1006
V
CEO
Collector-emitter voltage
2SA1006A
2SA1006B
V
EBO
I
C
I
CM
P
T
Emitter-base voltage
Collector current
Collector current-Peak
T
a
=25℃
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-180
-200
-250
-180
-200
-250
-5
-1.5
-3.0
1.5
W
V
A
A
V
V
UNIT
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
2SA1006 2SA1006A 2SA1006B
CONDITIONS
I
C
=-0.5A; I
B
=-50mA
I
C
=-0.5A ;I
B
=-50mA
V
CB
=-150V ;I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-5mA ; V
CE
=-5V
I
C
=-150mA ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V,f=1MHz
I
C
=-100mA ; V
CE
=10V
MIN
TYP.
MAX
-1.0
-1.5
-1
-1
UNIT
V
V
μA
μA
30
60
45
80
320
pF
MHz
h
FE-2
Classifications
R
60-120
Q
100-200
P
160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1006 2SA1006A 2SA1006B
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
4
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
5
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