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NAND08GW3B3AZB1E

Description
1GX8 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63
Categorystorage    storage   
File Size1MB,59 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND08GW3B3AZB1E Overview

1GX8 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM,1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63

NAND08GW3B3AZB1E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionTFBGA,
Contacts63
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time25000 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee1
length12 mm
memory density8589934592 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals63
word count1073741824 words
character code1000000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1GX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width9.5 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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