12A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-262AA |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 103 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (ID) | 12 A |
| Maximum drain-source on-resistance | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-262AA |
| JESD-30 code | R-PSIP-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 36 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2SK3456-S-AZ | 2SK3456-ZJ-AZ | |
|---|---|---|
| Description | 12A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN | 12A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN |
| Parts packaging code | TO-262AA | D2PAK |
| package instruction | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknow | unknow |
| Other features | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 103 mJ | 103 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 500 V | 500 V |
| Maximum drain current (ID) | 12 A | 12 A |
| Maximum drain-source on-resistance | 0.6 Ω | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-262AA | TO-263AB |
| JESD-30 code | R-PSIP-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 36 A | 36 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | YES |
| Terminal form | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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