Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Solitron Devices Inc. |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 120 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| JEDEC-95 code | TO-61 |
| JESD-30 code | O-MUPM-D3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 87 W |
| Maximum power dissipation(Abs) | 87 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 30 MHz |
| VCEsat-Max | 0.5 V |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD