IS43LR32160B-75BLI datasheet, PDF

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IS43LR32160B-75BLI: DescriptionDDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90; Categorystorage storage; File Size2MB，42 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS43LR32160B-75BLI Overview

DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90

IS43LR32160B-75BLI Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	DSBGA
package instruction	TFBGA, BGA90,9X15,32
Contacts	90
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	2,4,8,16
JESD-30 code	R-PBGA-B90
JESD-609 code	e1
length	13 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	32
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	90
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8,16
Maximum standby current	0.00001 A
Maximum slew rate	0.11 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	8 mm

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IS43LR32160B, IS46LR32160B

Advanced Information

32Bits

4Banks Mobile DDR SDRAM

Description

The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x

32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

on a 32-bit bus. The double data rate architecture is essentially a 2

prefetch architecture with an interface designed to transfer two data

words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.

The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are

compatible with LVCMOS.

Features

• JEDEC standard 1.8V power supply.

• VDD = 1.8V, VDDQ = 1.8V

• Four internal banks for concurrent operation

• MRS cycle with address key programs

- CAS latency 2, 3 (clock)

- Burst length (2, 4, 8, 16)

- Burst type (sequential & interleave)

• Fully differential clock inputs (CK, /CK)

• All inputs except data & DM are sampled at the rising

edge of the system clock

• Data I/O transaction on both edges of data strobe

• Bidirectional data strobe per byte of data (DQS)

• DM for write masking only

• Edge aligned data & data strobe output

• Center aligned data & data strobe input

• 64ms refresh period (8K cycle)

• Auto & self refresh

• Concurrent Auto Precharge

• Maximum clock frequency up to 166MHZ

• Maximum data rate up to 333Mbps/pin

• Special Power Saving supports.

- PASR (Partial Array Self Refresh)

- Auto TCSR (Temperature Compensated Self Refresh)

- Deep Power Down Mode

- Programmable Driver Strength Control by Full Strength

or 1/2, 1/4, 1/8 of Full Strength

• LVCMOS compatible inputs/outputs

• 90-Ball FBGA package

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Rev.00B | Dec. 2010

www.issi.com

- dram@issi.com

IS43LR32160B-75BLI Related Products

	IS43LR32160B-75BLI	IS46LR32160B-75BLA1	IS43LR32160B-75BL	IS43LR32160B-75BLI-TR	IS46LR32160B-75BLA2	IS46LR32160B-75BLA2-TR
Description	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90	16MX32 DDR DRAM, 6ns, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90	16MX32 DDR DRAM, 6ns, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns
Maximum clock frequency (fCLK)	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16
JESD-30 code	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	32	32	32	32	32
Number of terminals	90	90	90	90	90	90
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000	16000000
Maximum operating temperature	85 °C	85 °C	70 °C	85 °C	105 °C	105 °C
Minimum operating temperature	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C
organize	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	FBGA	TFBGA	FBGA
Encapsulate equivalent code	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192
Continuous burst length	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16
Maximum standby current	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A
Maximum slew rate	0.11 mA	0.11 mA	0.11 mA	0.11 mA	0.11 mA	0.11 mA
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Is it lead-free?	Lead free	Lead free	Lead free	-	Lead free	-
Parts packaging code	DSBGA	DSBGA	DSBGA	-	DSBGA	-
package instruction	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32	-	TFBGA, BGA90,9X15,32	-
Contacts	90	90	90	-	90	-
ECCN code	EAR99	EAR99	EAR99	-	EAR99	-
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	-
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	-
JESD-609 code	e1	e1	e1	-	e1	-
length	13 mm	13 mm	13 mm	-	13 mm	-
Humidity sensitivity level	3	3	3	-	3	-
Number of functions	1	1	1	-	1	-
Number of ports	1	1	1	-	1	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	-
Peak Reflow Temperature (Celsius)	260	260	260	-	260	-
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	-	1.2 mm	-
self refresh	YES	YES	YES	-	YES	-
Maximum supply voltage (Vsup)	1.95 V	1.95 V	1.95 V	-	1.95 V	-
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	-	1.7 V	-
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	-	Tin/Silver/Copper (Sn/Ag/Cu)	-
Maximum time at peak reflow temperature	40	40	40	-	40	-
width	8 mm	8 mm	8 mm	-	8 mm	-

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