Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | FUJITSU |
Parts packaging code | SOIC |
package instruction | TSSOP, TSSOP20/24,.63,20 |
Contacts | 20 |
Reach Compliance Code | unknown |
Maximum access time | 70 ns |
I/O type | COMMON |
JESD-30 code | R-PDSO-G20 |
JESD-609 code | e0 |
memory density | 1048576 bit |
Memory IC Type | FAST PAGE DRAM |
memory width | 4 |
Number of terminals | 20 |
word count | 262144 words |
character code | 256000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 256KX4 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSSOP |
Encapsulate equivalent code | TSSOP20/24,.63,20 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
power supply | 5 V |
Certification status | Not Qualified |
refresh cycle | 512 |
Maximum standby current | 0.001 A |
Maximum slew rate | 0.068 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal pitch | 0.5 mm |
Terminal location | DUAL |
MB81C4256A-70PFTN | MB81C4256A-70PJR | MB81C4256A-10P | MB81C4256A-70P | MB81C4256A-70PJ | |
---|---|---|---|---|---|
Description | Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20 | 256KX4 FAST PAGE DRAM, 70ns, PDSO20, PLASTIC, LCC-26/20 | Fast Page DRAM, 256KX4, 100ns, CMOS, PDIP20 | Fast Page DRAM, 256KX4, 70ns, CMOS, PDIP20 | Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
Parts packaging code | SOIC | LCC | DIP | DIP | LCC |
package instruction | TSSOP, TSSOP20/24,.63,20 | SOJ, | DIP, DIP20,.3 | DIP, DIP20,.3 | SOJ, SOJ20/26,.34 |
Contacts | 20 | 26/20 | 20 | 20 | 26/20 |
Reach Compliance Code | unknown | compliant | unknown | unknown | unknown |
Maximum access time | 70 ns | 70 ns | 100 ns | 70 ns | 70 ns |
JESD-30 code | R-PDSO-G20 | R-PDSO-J20 | R-PDIP-T20 | R-PDIP-T20 | R-PDSO-J20 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 |
memory density | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
Memory IC Type | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
memory width | 4 | 4 | 4 | 4 | 4 |
Number of terminals | 20 | 20 | 20 | 20 | 20 |
word count | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
character code | 256000 | 256000 | 256000 | 256000 | 256000 |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | TSSOP | SOJ | DIP | DIP | SOJ |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | YES | YES | NO | NO | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING | J BEND | THROUGH-HOLE | THROUGH-HOLE | J BEND |
Terminal pitch | 0.5 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
Maker | FUJITSU | - | FUJITSU | FUJITSU | FUJITSU |
I/O type | COMMON | - | COMMON | COMMON | COMMON |
Output characteristics | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE |
Encapsulate equivalent code | TSSOP20/24,.63,20 | - | DIP20,.3 | DIP20,.3 | SOJ20/26,.34 |
power supply | 5 V | - | 5 V | 5 V | 5 V |
refresh cycle | 512 | - | 512 | 512 | 512 |
Maximum standby current | 0.001 A | - | 0.001 A | 0.001 A | 0.001 A |
Maximum slew rate | 0.068 mA | - | 0.054 mA | 0.068 mA | 0.068 mA |