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MB81C4256A-70PFTN

Description
Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20
Categorystorage    storage   
File Size1MB,24 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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MB81C4256A-70PFTN Overview

Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20

MB81C4256A-70PFTN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFUJITSU
Parts packaging codeSOIC
package instructionTSSOP, TSSOP20/24,.63,20
Contacts20
Reach Compliance Codeunknown
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G20
JESD-609 codee0
memory density1048576 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of terminals20
word count262144 words
character code256000
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP20/24,.63,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum standby current0.001 A
Maximum slew rate0.068 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL

MB81C4256A-70PFTN Related Products

MB81C4256A-70PFTN MB81C4256A-70PJR MB81C4256A-10P MB81C4256A-70P MB81C4256A-70PJ
Description Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20 256KX4 FAST PAGE DRAM, 70ns, PDSO20, PLASTIC, LCC-26/20 Fast Page DRAM, 256KX4, 100ns, CMOS, PDIP20 Fast Page DRAM, 256KX4, 70ns, CMOS, PDIP20 Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Parts packaging code SOIC LCC DIP DIP LCC
package instruction TSSOP, TSSOP20/24,.63,20 SOJ, DIP, DIP20,.3 DIP, DIP20,.3 SOJ, SOJ20/26,.34
Contacts 20 26/20 20 20 26/20
Reach Compliance Code unknown compliant unknown unknown unknown
Maximum access time 70 ns 70 ns 100 ns 70 ns 70 ns
JESD-30 code R-PDSO-G20 R-PDSO-J20 R-PDIP-T20 R-PDIP-T20 R-PDSO-J20
JESD-609 code e0 e0 e0 e0 e0
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
memory width 4 4 4 4 4
Number of terminals 20 20 20 20 20
word count 262144 words 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000 256000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C
organize 256KX4 256KX4 256KX4 256KX4 256KX4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSSOP SOJ DIP DIP SOJ
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount YES YES NO NO YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING J BEND THROUGH-HOLE THROUGH-HOLE J BEND
Terminal pitch 0.5 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL
Maker FUJITSU - FUJITSU FUJITSU FUJITSU
I/O type COMMON - COMMON COMMON COMMON
Output characteristics 3-STATE - 3-STATE 3-STATE 3-STATE
Encapsulate equivalent code TSSOP20/24,.63,20 - DIP20,.3 DIP20,.3 SOJ20/26,.34
power supply 5 V - 5 V 5 V 5 V
refresh cycle 512 - 512 512 512
Maximum standby current 0.001 A - 0.001 A 0.001 A 0.001 A
Maximum slew rate 0.068 mA - 0.054 mA 0.068 mA 0.068 mA
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