3.8 A, 30 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
| Parameter Name | Attribute value |
| Number of terminals | 3 |
| Minimum breakdown voltage | 30 V |
| Processing package description | GREEN, PLASTIC PACKAGE-3 |
| Lead-free | Yes |
| EU RoHS regulations | Yes |
| China RoHS regulations | Yes |
| state | ACTIVE |
| packaging shape | Rectangle |
| Package Size | SMALL OUTLINE |
| surface mount | Yes |
| Terminal form | GULL WING |
| terminal coating | MATTE Tin |
| Terminal location | pair |
| Packaging Materials | Plastic/Epoxy |
| structure | Single WITH BUILT-IN diode |
| Number of components | 1 |
| transistor applications | switch |
| Transistor component materials | silicon |
| Channel type | P channel |
| field effect transistor technology | Metal-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT |
| Transistor type | universal power supply |
| Maximum leakage current | 3.8 A |
| Maximum drain on-resistance | 0.0700 ohm |
| Maximum leakage current pulse | 11 A |
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