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Datasheet> All Categories > Discrete semiconductor> diode> ADB1008
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ADB1008

Description
Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size103KB，2 Pages
ManufacturerDiotec Electronics Corp
Environmental Compliance
Download Datasheet Parametric Compare View All

ADB1008 Overview

Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 800V V(RRM), Silicon,

ADB1008 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiotec Electronics Corp
package instructionS-PUFM-W4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresUL RECOGNIZED, HIGH RELIABILITY
Minimum breakdown voltage850 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeS-PUFM-W4
Maximum non-repetitive peak forward current300 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationUPPER

ADB1008 Related Products

ADB1008 DB1004 ADB1004 DB1006 ADB1006 DB1010 DB1000 DB1008 DB1001 DB1002
Description Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 800V V(RRM), Silicon, Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 400V V(RRM), Silicon Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 400V V(RRM), Silicon, Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 600V V(RRM), Silicon Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 600V V(RRM), Silicon, Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 1000V V(RRM), Silicon Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 50V V(RRM), Silicon Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 800V V(RRM), Silicon Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 100V V(RRM), Silicon Bridge Rectifier Diode, Avalanche, 1 Phase, 8A, 200V V(RRM), Silicon
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to conform to
Maker Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp
package instruction S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY UL RECOGNIZED, HIGH RELIABILITY
Minimum breakdown voltage 850 V 400 V 450 V 600 V 650 V 1000 V 50 V 800 V 100 V 200 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A 300 A 300 A 300 A 300 A 300 A 300 A
Number of components 4 4 4 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 400 V 400 V 600 V 600 V 1000 V 50 V 800 V 100 V 200 V
Maximum reverse current 5 µA 0.000005 µA 5 µA 0.000005 µA 5 µA 0.000005 µA 0.000005 µA 5 µA 0.000005 µA 0.000005 µA
surface mount NO NO NO NO NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER

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