DMN55D0UT datasheet, PDF - EEWORLD Datasheet

DMN55D0UT: Description160 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size427KB，7 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DMN55D0UT Overview

160 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	50 V
Processing package description	GREEN, PLASTIC PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Number of components	1
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	0.1600 A
Maximum drain on-resistance	4 ohm

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