Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1566
DESCRIPTION
・With
TO-220F package
・Excellent
DC current gain characteristics
・Low
collector saturation voltage
・Wide
SOA (safe operating area)
・Complement
to type 2SD2395
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
固电
导½
半
PARAMETER
CONDITIONS
Collector-base voltage
Collector-emitter voltage
CH
IN
Emitter-base voltage
Collector current
ANG
MIC
E SE
Open emitter
Open base
Open collector
T
a
=25℃
OR
UCT
ND
O
MAX
-60
-50
-5
-3
-4.5
2
UNIT
V
V
V
A
A
Collector current-peak
P
C
Collector dissipation
T
C
=25℃
25
150
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
I
C
=-1mA ;I
B
=0
I
C
=-50μA ;I
E
=0
I
E
=-50μA ;I
C
=0
I
C
=-2A ;I
B
=-0.2A
I
C
=-2A ;I
B
=-0.2A
V
CB
=-60V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
100
MIN
-50
-60
-5
TYP.
2SB1566
MAX
UNIT
V
V
V
-1.0
-1.5
-1.0
-1.0
V
V
μA
μA
电半
固
F
DC current gain
导½
Output capacitance
Transition frequency
I
E
=0 ; V
CB
=-10V;f=1MHz
h
FE
Classifications
E
100-200
HA
INC
160-320
ES
NG
I
C
=-0.5A ; V
CE
=-5V
MIC
E
OR
UCT
ND
O
320
40
60
pF
MHz
2
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