This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
Silicon epitaxial planar type
For small current recitification
Features
Small reverse current I
R
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini2-F5-B
Name
Pin
1: Cathode
2: Anode
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: A2
Unit
V
V
mA
mA
A
°C
°C
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Output current (Average)
Repetitive peak forward current
Non-repetitive peak forward surge current
*
Junction temperature
Storage temperature
Note) *: 1 t = 1 s
Symbol
V
R
V
RM
I
O(AV)
I
FRM
I
FSM
T
j
T
stg
Rating
300
300
200
600
1
150
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage (DC)
Reverse current (DC)
Terminal capacitance
Symbol
V
F
I
R1
I
R2
C
t
I
F
= 200 mA
V
R
= 200 V
V
R
= 300 V
V
R
= 0 V, f = 1 MHz
3.5
Conditions
Min
Typ
Max
1.2
200
1
Unit
V
nA
µA
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz
Publication date: June 2010
ZKF00171AED
1
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semiconductors de
(1)
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(5) When designing your equipment, comply with the range of a
(operating power supply voltage and operating environment etc
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