Inchange Semiconductor
Product SpecificationI
Silicon NPN Power Transistors
2SC3569
DESCRIPTION
·With
TO-220F package
·Low
collector saturation voltage
APPLICATIONS
·High
speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
·
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
2
4
1
15
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.5A; I
B
=0.1A;L=1mH
I
C
=0.5 A;I
B
=0.1A
I
C
=0.5 A;I
B
=0.1A
V
CB
=400V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
20
10
MIN
400
TYP.
2SC3569
MAX
UNIT
V
1.0
1.2
10
10
80
V
V
μA
μA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=0.5A;R
L
=300Ω
I
B1
=- I
B2
=0.1A
V
CC
=150V
1.0
2.5
1.0
μs
μs
μs
h
FE-1
classifications
R
20-40
O
30-60
Y
40-80
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3569
Fig.2 Outline dimensions
3
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