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2SB806

Description
0.7A, 120V, PNP, Si, POWER TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size357KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SB806 Overview

0.7A, 120V, PNP, Si, POWER TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN

2SB806 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionPOWER, MINIMOLD, SC-62, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)75 MHz
Base Number Matches1

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