DISCRETE SEMICONDUCTORS
DATA SHEET
PMST3906
PNP switching transistor
Product specification
Supersedes data of 1999 Apr 22
2004 Jan 21
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES
•
Collector current capability I
C
=
−200
mA
•
Collector-emitter voltage V
CEO
=
−40
V.
APPLICATIONS
•
General amplification and switching.
DESCRIPTION
PNP switching transistor in a SOT323 plastic package.
NPN complement: PMST3904.
MARKING
TYPE NUMBER
PMST3906
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
1
Top view
2
PMST3906
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
MAX.
−40
−200
UNIT
V
mA
MARKING CODE
(1)
∗2A
handbook, halfpage
3
3
1
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMST3906
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT323
2004 Jan 21
2
Philips Semiconductors
Product specification
PNP switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
PMST3906
MAX.
−40
−40
−6
−200
−200
−100
200
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
UNIT
K/W
2004 Jan 21
3
Philips Semiconductors
Product specification
PNP switching transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
C
= 0; V
EB
=
−6
V
V
CE
=
−1
V; see Fig.2
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA
I
C
=
−100
mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
E
= i
e
= 0; V
CB
=
−5
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−500
mV;
f = 1 MHz
I
C
=
−10
mA; V
CE
=
−20
V;
f = 100 MHz
I
C
=
−100 µA;
V
CE
=
−5
V;
R
S
= 1 kΩ; f = 10 Hz to 15.7 kHz
I
Con
=
−10
mA; I
Bon
=
−1
mA;
I
Boff
= 1 mA
60
80
100
60
30
−
−
−
−
−
−
250
−
−
−
−
−
MIN.
PMST3906
MAX.
−50
−50
UNIT
nA
nA
300
−
−
−250
−400
−850
−950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.7
t
d
t
r
t
s
t
f
delay time
rise time
storage time
fall time
−
−
−
−
35
35
225
75
ns
ns
ns
ns
2004 Jan 21
4
Philips Semiconductors
Product specification
PNP switching transistor
PMST3906
handbook, halfpage
600
MHC459
hFE
(1)
−250
handbook, halfpage
IC
(mA)
−200
MHC460
(3)
(2)
(1)
(4)
400
−150
(5)
(6)
(7)
(2)
−100
(8)
200
(3)
(9)
−50
(10)
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
(1)
(2)
(3)
(4)
0
0
−2
−4
−6
−8
−10
VCE (V)
T
amb
= 25
°C.
V
CE
=
−1
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
B
=
−1.5
mA.
I
B
=
−1.35
mA.
I
B
=
−1.2
mA.
I
B
=
−1.05
mA.
(5)
(6)
(7)
(8)
I
B
=
−0.9
mA.
I
B
=
−0.75
mA.
I
B
=
−0.6
mA.
I
B
=
−0.45
mA.
(9) I
B
=
−0.3
mA.
(10) I
B
=
−0.15
mA.
Fig.3
Fig.2 DC current gain; typical values.
Collector current as a function of
collector-emitter voltage.
handbook, halfpage
−1200
VBE
(mV)
−1000
MHC461
handbook, halfpage
−1200
VBEsat
(mV)
−1000
MHC462
(1)
(1)
−800
(2)
−800
(2)
−600
(3)
−600
(3)
−400
−400
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
V
CE
=
−1
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Base-emitter voltage as a function of
collector current.
Fig.5
Base-emitter saturation voltage as a
function of collector current.
2004 Jan 21
5
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