Power Field-Effect Transistor, 18A I(D), 100V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 18 A |
| Maximum drain-source on-resistance | 0.23 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AA |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 125 W |
| Maximum pulsed drain current (IDM) | 72 A |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 150 ns |
| Maximum opening time (tons) | 120 ns |
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