SD5101CHP datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> SD5101CHP

Preview

SD5101CHP: DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 15V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size258KB，4 Pages; ManufacturerUniversal Semiconductor Inc

Download Datasheet Parametric Compare View All

SD5101CHP Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 15V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SD5101CHP Parametric

Parameter Name	Attribute value
Maker	Universal Semiconductor Inc
package instruction	UNCASED CHIP, R-XUUC-N9
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW INSERTION LOSS
Configuration	COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF
JESD-30 code	R-XUUC-N9
Number of components	4
Number of terminals	9
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

SD5101CHP Related Products

	SD5101CHP	SD5100N	SD5101N	SD5200N	SD5200CHP	SD5100CHP
Description	Small Signal Field-Effect Transistor, 0.05A I(D), 15V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14	Small Signal Field-Effect Transistor, 0.05A I(D), 15V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-16	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	UNCASED CHIP, R-XUUC-N9	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T14	IN-LINE, R-PDIP-T16	UNCASED CHIP, R-XUUC-N12	UNCASED CHIP, R-XUUC-N9
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS
Configuration	COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	15 V	30 V	15 V	30 V	30 V	30 V
Maximum drain current (ID)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Maximum drain-source on-resistance	70 Ω	70 Ω	70 Ω	80 Ω	80 Ω	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF
JESD-30 code	R-XUUC-N9	R-PDIP-T14	R-PDIP-T14	R-PDIP-T16	R-XUUC-N12	R-XUUC-N9
Number of components	4	4	4	4	4	4
Number of terminals	9	14	14	16	12	9
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	IN-LINE	IN-LINE	IN-LINE	UNCASED CHIP	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO	YES	YES
Terminal form	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	NO LEAD
Terminal location	UPPER	DUAL	DUAL	DUAL	UPPER	UPPER
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Universal Semiconductor Inc	-	-	Universal Semiconductor Inc	Universal Semiconductor Inc	Universal Semiconductor Inc

Recommended Resources

Use MC34063 as a 12-volt programming power supply for single-chip microcomputer

Circuit diagram of excessive speed warning device

LA4550 audio IC amplifier circuit diagram

SY-1001 ultrasonic remote control switch

555 high voltage delay turn-on control circuit

Photoelectric automatic acid seasoning device circuit

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components