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DB3S314F

Description
Mixer Diode, L Band, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size462KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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DB3S314F Overview

Mixer Diode, L Band, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN

DB3S314F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionR-PDSO-F3
Contacts3
Manufacturer packaging codeSSMINI3-F3-B
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)1 V
frequency bandL BAND
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.03 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
This product complies with the RoHS Directive (EU 2002/95/EC).
DB3S314F
Silicon epitaxial planar type
For high speed switching circuits
DB3J314F in SSMini2 type package
Features
Short reverse recovery time t
rr
Small reverse current I
R
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SSMini3-F3-B
Name
Pin
1: Anode-1
2: Cathode-2
Basic Part Number
Dual DB2J314 (Series)
3: Cathode-1
Anode-2
Marking Symbol: 5C
Internal Connection
3
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
Single
Series
Single
Series
Symbol
V
R
V
RM
I
F
I
FM
T
j
T
stg
Rating
30
30
30
20
150
110
125
–55 to +125
Unit
V
V
mA
mA
mA
mA
°C
°C
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F1
V
F2
I
R
C
t
t
rr
I
F
= 1 mA
I
F
= 30 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
=10 mA, I
rr
= 1 mA,
R
L
= 100
Ω 
1.5
1.0
Conditions
Min
Typ
Max
0.4
1.0
300
Unit
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
*: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 1 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ver. BED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: November 2010
1

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