HERMETIC POWER MOSFET N-CHANNEL
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | SENSITRON |
| package instruction | SMALL OUTLINE, R-MSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (Abs) (ID) | 11 A |
| Maximum drain current (ID) | 11 A |
| Maximum drain-source on-resistance | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-MSSO-G2 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 430 W |
| Maximum pulsed drain current (IDM) | 44 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| SHD218513A | SHD218513 | SHD218513B | |
|---|---|---|---|
| Description | HERMETIC POWER MOSFET N-CHANNEL | HERMETIC POWER MOSFET N-CHANNEL | HERMETIC POWER MOSFET N-CHANNEL |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | SENSITRON | SENSITRON | SENSITRON |
| package instruction | SMALL OUTLINE, R-MSSO-G2 | SMALL OUTLINE, R-MXSO-N3 | SMALL OUTLINE, R-MSSO-G2 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | compli | compli | compli |
| Shell connection | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V | 600 V | 600 V |
| Maximum drain current (Abs) (ID) | 11 A | 11 A | 11 A |
| Maximum drain current (ID) | 11 A | 11 A | 11 A |
| Maximum drain-source on-resistance | 0.6 Ω | 0.6 Ω | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-MSSO-G2 | R-MXSO-N3 | R-MSSO-G2 |
| JESD-609 code | e0 | e0 | e0 |
| Humidity sensitivity level | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | METAL | METAL |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 430 W | 430 W | 430 W |
| Maximum pulsed drain current (IDM) | 44 A | 44 A | 44 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | NO LEAD | GULL WING |
| Terminal location | SINGLE | UNSPECIFIED | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
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