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BYD57MT/R

Description
DIODE 0.4 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size84KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYD57MT/R Overview

DIODE 0.4 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode

BYD57MT/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LELF-R2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.4 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.075 µs
surface mountYES
technologyAVALANCHE
Terminal formWRAP AROUND
Terminal locationEND

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