DIODE 0.4 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode
Parameter Name | Attribute value |
Maker | NXP |
package instruction | O-LELF-R2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JESD-30 code | O-LELF-R2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Maximum output current | 0.4 A |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 1000 V |
Maximum reverse recovery time | 0.075 µs |
surface mount | YES |
technology | AVALANCHE |
Terminal form | WRAP AROUND |
Terminal location | END |