HYMD512646L8-H datasheet, PDF - EEWORLD Datasheet

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HYMD512646L8-H: DescriptionDDR DRAM Module, 128MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184; Categorystorage storage; File Size231KB，16 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMD512646L8-H Overview

DDR DRAM Module, 128MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184

HYMD512646L8-H Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	DIMM
package instruction	,
Contacts	184
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N184
memory density	8589934592 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	184
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX64
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL

HYMD512646L8-H Related Products

	HYMD512646L8-H	HYMD5126468-K	HYMD5126468-L	HYMD512646L8-L	HYMD512646L8-K
Description	DDR DRAM Module, 128MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184	DDR DRAM Module, 128MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184	DDR DRAM Module, 128MX64, 0.8ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184	DDR DRAM Module, 128MX64, 0.8ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184	DDR DRAM Module, 128MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM
Contacts	184	184	184	184	184
Reach Compliance Code	compliant	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns	0.8 ns	0.8 ns	0.75 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
memory density	8589934592 bit	8589934592 bit	8589934592 bit	8589934592 bit	8589934592 bi
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64	64
Number of functions	1	1	1	1	1
Number of ports	1	1	1	1	1
Number of terminals	184	184	184	184	184
word count	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words
character code	128000000	128000000	128000000	128000000	128000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128MX64	128MX64	128MX64	128MX64	128MX64
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	SK Hynix	-	SK Hynix	SK Hynix	SK Hynix

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