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IS42S32800D-6TLI

Description
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, LEAD FREE, PLASTIC, TSOP2-86
Categorystorage    storage   
File Size778KB,60 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance  
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IS42S32800D-6TLI Overview

Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, LEAD FREE, PLASTIC, TSOP2-86

IS42S32800D-6TLI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeTSOP2
package instructionTSOP2, TSSOP86,.46,20
Contacts86
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G86
JESD-609 codee3
length22.22 mm
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals86
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX32
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP86,.46,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.003 A
Maximum slew rate0.35 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width10.16 mm

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