Bulletin I27213 03/06
IRK.41, .56..PbF SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
TOTALLY LEAD-FREE
ADD-A-pak
TM
GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
45 A
60 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
I
T(AV)
or I
F(AV)
@ 85°C
I
O(RMS)
(*)
I
TSM
@ 50Hz
I
FSM
@ 60Hz
I
2
t
I
2
√t
V
RRM
range
T
STG
T
J
(*) As AC switch.
IRK.41
45
100
850
890
3.61
3.30
36.1
IRK.56
60
135
1310
1370
8.50
7.82
85.0
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
o
@ 50Hz
@ 60Hz
400 to 1600
- 40 to 125
- 40 to125
C
C
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1
IRK.41, .56 Series
Bulletin I27213 03/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
06
08
IRK.41/ .56
10
12
14
16
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
400
600
800
1000
1200
1400
1600
I
RRM
I
DRM
125°C
mA
V
500
700
900
1100
1300
1500
1700
V
400
600
800
1000
1200
1400
1600
15
On-state Conduction
Parameters
I
T(AV)
I
F(AV)
Max. average on-state
current (Thyristors)
Maximum average
forward current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
or
I
FSM
Max. peak, one cycle
non-repetitive on-state
or forward current
100
850
890
715
750
940
985
I t
2
IRK.41
45
45
IRK.56
60
60
Units
Conditions
180
o
conduction, half sine wave,
T
C
= 85
o
C
135
A
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
10.05
9.60
85.6
0.85
0.88
3.53
3.41
1.54
KA
√s
V
mΩ
V
2
I
(RMS)
t=8.3ms reapplied
or
I
(RMS)
Sinusoidal
half wave,
Initial T
J
= T
J
max.
t=10ms No voltage
t=10ms 100% V
RRM
t=8.3ms reapplied
t=10ms T
J
= 25
o
C,
t=8.3ms no voltage reapplied
t=10ms No voltage
t=8.3ms reapplied
KA
2
s
t=10ms 100% V
RRM
t=8.3ms reapplied
t=10ms T
J
= 25
o
C,
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25°C
Initial T
J
= T
J
max.
Max. I t for fusing
2
3.61
3.30
2.56
2.33
4.42
4.03
I
√t
2
Max. I
√t
for fusing (1)
voltage (2)
2
36.1
0.88
0.91
5.90
5.74
1.81
V
T(TO)
Max. value of threshold
r
t
V
TM
V
FM
di/dt
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
I
H
I
L
Max. holding current
Max. latching current
150
A/µs
T
J
= 25
o
C, from 0.67 V
DRM
,
I
TM
=π x I
T(AV)
,
I
g
= 500mA,
t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V,resistive load
(3) 16.7% x
π
x I
AV
< I <
π
x I
AV
200
400
mA
(1) I
2
t for time t
x
=
I
2
√
t x
√
t
x
(4) I >
π
x I
AV
(2) Average power
=
V
T(TO)
x I
T(AV)
+
r
t
x (I
T(RMS)
)
2
2
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IRK.41, .56 Series
Bulletin I27213 03/06
Triggering
Parameters
P
GM
I
GM
Max. peak gate power
P
G(AV)
Max. average gate power
Max. peak gate current
gate voltage
V
GT
Max. gate voltage
required to trigger
I
GT
V
GD
I
GD
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
-V
GM
Max. peak negative
IRK.41
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
IRK.56
10
2.5
2.5
Units
W
A
Conditions
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
V
mA
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Blocking
Parameters
I
RRM
I
DRM
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
V
INS
RMS isolation voltage
2500 (1 min)
3500 (1 sec)
500
V
V/µs
15
mA
T
J
= 125
o
C, gate open circuit
50 Hz, circuit to base, all terminals
shorted
T
J
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
IRK.41
IRK.56
Units
Conditions
dv/dt Max. critical rate of rise
of off-state voltage (5)
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating
temperature range
Storage temp. range
resistance, junction
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
5
3
110 (4)
TO-240AA
Nm
gr (oz)
JEDEC
0.1
0.23
IRK.41
- 40 to 125
- 40 to 125
IRK.56
Units
Conditions
°C
R
thJC
Max. internal thermal
0.20
K/W
Per module, DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
∆R
Conduction (per Junction)
Devices
IRK.41
IRK.56
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Sine half wave conduction
180
0.11
0.09
o
Rect. wave conduction
30
0.34
0.27
o
120
0.13
0.11
o
90
0.17
0.13
o
60
0.23
0.18
o
180
0.09
0.07
o
120
o
0.14
0.11
90
o
0.18
0.14
60
o
0.23
0.19
30
o
0.34
0.28
Units
°C/W
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IRK.41, .56 Series
Bulletin I27213 03/06
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
6
6
-
-
-
-
-
-
T
2
56
3
/
16 S90
4
5
P
6
IRK.57 types
With no auxiliary cathode
Module type
Circuit configuration (See Circuit Configuration table below)
Current code
* *
Voltage code (See Voltage Ratings table)
dv/dt code:
P = Lead-Free
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
e.g. : IRKT57/16P etc.
* *
Available with no auxiliary cathode.
To specify change:
41 to 42
56 to 57
Outline Table
Dimensions are in millimeters and [inches]
IRKT
(1)
~
IRKH
(1)
~
IRKL
(1)
~
IRKN
(1)
-
+
(2)
+
(2)
+
(2)
(2)
+
-
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1
(4) (5)
-
(3)
-
(3)
K2 G2
(7) (6)
(3)
+
G1 K1
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.41, .56 Series
Bulletin I27213 03/06
Maximum Allow able Case T
empera ture (°C)
Maximum Allowable Case T
emperature (°C)
130
IRK.41.. S
eries
R
thJC
(DC) = 0.46 K/ W
130
IR
K.41.. S
eries
R
thJC
(DC) = 0.46 K/ W
120
120
110
Cond uction Angle
110
30°
60°
90°
90
120°
Conduction Period
100
30°
90
60°
90°
120°
180°
100
180°
DC
0
20
40
60
80
80
0
10
20
30
40
50
80
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
70
60
50
40
30
Conduction Angle
Fig. 2 - Current Ratings Characteristics
100
DC
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
180°
120°
90°
60°
30°
Maximum Average On-state Power Los (W)
s
80
R Limit
MS
60
RMS Limit
40
Conduction Period
20
10
0
0
10
20
30
40
50
Average On-state Current (A)
IR
K.41.. S
eries
Per Junction
T
J
= 125°C
20
IR
K.41.. S
eries
Per Junction
T
J
= 125°C
0
20
40
60
80
0
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
800
Fig. 4 - On-state Power Loss Characteristics
900
800
700
600
500
400
Peak Half S Wave On-state Current (A)
ine
700
At Any Ra ted Loa d Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Peak Half S
ine Wave On-state Current (A)
600
Ma ximum Non Repetitive S
urge Current
Versus Pulse T in Duration. Control
ra
Of Conduction May Not B Maintained .
e
Initial T
J
125°C
=
No Volta g e Rea pp lied
R ted V
RRM
a
Reap p lied
500
400
IRK.41.. S
eries
Per Junction
300
1
10
100
Number Of Equa l Amplitud e Half Cycle Current Pulses (N)
IR
K.41.. S
eries
Per Junction
0.1
Pulse T
rain Duration (s)
1
300
0.01
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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