SPA04N80C3
CoolMOS
TM
Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOS
TM
800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Product Summary
V
DS
R
DS(on)max
@ T
j
= 25°C
Q
g,typ
800
1.3
23
V
Ω
nC
Type
SPA04N80C3
Package
PG-TO220-3
Marking
04N80C3
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
2)
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
3)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR3),4)
Avalanche current, repetitive
t
AR3),4)
MOSFET dv /dt ruggedness
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
DS
=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P
tot
T
j
,
T
stg
M2.5 screws
T
C
=25 °C
T
C
=25 °C
I
D
=0.8A,
V
DD
=50 V
I
D
=4 A,
V
DD
=50 V
Value
4
2.5
12
170
0.1
4
50
±20
±30
38
-55 ... 150
50
W
°C
Ncm
A
V/ns
V
mJ
Unit
A
Rev. 2.9
page 1
2008-10-15
SPA04N80C3
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current
3)
Reverse diode dv /dt
5)
Symbol Conditions
I
S
I
S,pulse
dv /dt
T
C
=25 °C
12
4
V/ns
Value
4
Unit
A
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R
thJC
R
thJA
leaded
-
-
-
-
4
80
K/W
Soldering temperature,
T
sold
wave soldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10s
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
(BR)DS
V
GS(th)
I
DSS
V
GS
=0 V,
I
D
=4 A
V
DS
=V
GS
,
I
D
=0.24 mA
V
DS
=800 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=800 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=2.5 A,
T
j
=25 °C
V
GS
=10 V,
I
D
=2.5 A,
T
j
=150 °C
Gate resistance
R
G
f
=1 MHz, open drain
800
-
2.1
-
-
870
3
-
-
-
3.9
10
µA
V
-
-
-
50
-
1.1
-
100
1.3
nA
Ω
-
-
3
1.2
-
-
Ω
Rev. 2.9
page 2
2008-10-15
SPA04N80C3
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
C
iss
C
oss
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
-
-
-
V
GS
=0 V,
V
DS
=0 V
to 480 V
-
-
V
DD
=400 V,
V
GS
=0/10 V,
I
D
=4 A,
R
G=
22 ? ,
T
j
=25 °C
-
-
-
51
25
15
72
12
-
-
-
-
-
ns
570
25
19
-
-
-
pF
Values
typ.
max.
Unit
Effective output capacitance, energy
C
o(er)
related
6)
Effective output capacitance, time
related
7)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
2)
3)
4)
5)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=640 V,
I
D
=4 A,
V
GS
=0 to 10 V
-
-
-
-
3
12
23
5.5
-
-
31
-
nC
V
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V,
I
F
=I
S
=4 A,
T
j
=25 °C
-
-
1
520
4
12
1.2
-
-
-
V
ns
µC
A
V
R
=400 V,
I
F
=I
S
=4 A,
di
F
/dt =100 A/µs
-
-
J-STD20 and JESD22
Limited only by maximum temperature
Pulse width
t
p
limited by
T
j,max
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=E
AR
*f.
I
SD
=I
D
, di/dt=400A/µs, V
DClink
= 400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch
6)
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
7)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Rev. 2.9
page 3
2008-10-15
SPA04N80C3
1 Power dissipation
P
tot
=f(T
C
)
2 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
40
10
2
limited by on-state
resistance
30
10
1
10 µs
100 µs
1 µs
P
tot
[W]
I
D
[A]
20
10
0
1 ms
10 ms
DC
10
10
-1
0
0
25
50
75
100
125
150
10
-2
1
10
100
1000
T
C
[°C]
V
DS
[V]
3 Max. transient thermal impedance
Z
thJC
=f(t
P
)
parameter:
D=t
p
/T
10
1
4 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C;
t
p
=10 µs
parameter:
V
GS
15
20 V
0.5
12
10
0
0.2
10 V
Z
thJC
[K/W]
9
0.1
0.05
0.02
0.01
single pulse
6V
I
D
[A]
6.5 V
6
10
-1
3
5.5 V
5V
10
-2
10
-5
0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
5
10
15
20
25
t
p
[s]
V
DS
[V]
Rev. 2.9
page 4
2008-10-15
SPA04N80C3
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=150 °C;
t
p
=10 µs
parameter:
V
GS
6
20 V
6 Typ. drain-source on-state resistance
R
DS(on)
=f(I
D
);
T
j
=150 °C
parameter:
V
GS
5.4
5
10 V
5
6V
4.6
4
R
DS(on)
[
Ω
]
4.2
I
D
[A]
3
5.5 V
3.8
6V
10 V
2
5V
3.4
4.5 V
5.5 V
20 V
5V
4V
1
4.5 V
3
0
0
5
10
15
20
25
2.6
0
2
4
6
8
V
DS
[V]
I
D
[A]
7 Drain-source on-state resistance
R
DS(on)
=f(T
j
);
I
D
=2.5 A;
V
GS
=10 V
8 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
;
t
p
=10 µs
parameter:
T
j
3.2
15
2.8
25 °C
2.4
10
2
R
DS(on)
[
Ω
]
1.6
98 %
I
D
[A]
150 °C
1.2
typ
5
0.8
0.4
0
-60
-20
20
60
100
140
180
0
0
2
4
6
8
10
T
j
[°C]
V
GS
[V]
Rev. 2.9
page 5
2008-10-15
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