, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
..designed for use as general purpose amplifiers.low frequency
switching and motor control applications.
FEATURES:
* High Gain Darlington Performance
* High DC Current Gain hFE = 400(Min) <$ l
c
= 10 A
* Monolithic Construction
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
NPN
MJ11017 MJ11018
MJ11019 MJ11020
MJ11021 MJ11022
MAXIMUM RATINGS
15 AMPERE
COMPLEMENTARY
SILICON POWER
DARLINGTON TRANSISTOR
150-250 VOLTS
175 WATTS
Characteristic
Collector-Emitter Voltage
COIIector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation @T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol MJ11017 MJ11019 MJ11021
MJ11018 MJ11020 MJ11022
VCEO
VCBO
V
EBO
Unit
V
V
V
A
150
150
200
200
5.0
250
250
'c
'CM
15
30
0.5
TO-3
IB
PD
A
175
1.18
W
W/°C
°C
Tj •"'"sTG
-65
to
+175
Characteristic
Thermal Resistance Junction to Case
Symbol
R6jc
Max
0.86
Unit
°c/w
PIN 1 BASE
2.EMtm!R
COLLECTOR(CASE)
FIGURE -1 POWER DERATING
200
M75
j 150
i 125
; 100
i 75
| 50
: 25
25
50
75
100
125
150
175 200
T
c
, TEMPERATUREf>C)
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
MIN
MAX
36.75
19.28
7.96
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.67
38.96
22.23
9.28
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.18
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ11017, MJ11019, MJ11021 PNP/MJ11018. MJ11020, MJ11022 NPN
ELECTRICAL CHARACTERISTICS ( T
c
= 25°C unless otherwise noted )
,
Characteristic
..„»—..—»-..,„
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
(l
c
=100mA,l
B
= 0)
MJ11017.MJ11018
MJ11019.MJ11020
MJ1 1021 ,MJ1 1022
VCEO,™,
V
150
200
250
mA
1.0
1.0
1.0
mA
0.5
5.0
mA
2.0
Collector Cutoff Current
( V
CI
= 75 V, I. = 0 )
(V
CI
= 100V, l, = 0)
( V
el
- 125 V, I. = 0 )
Collector Cutoff Current
( V
ei
= Rated V
CB
,
V^^=
1 .5V )
( V
ei
= Rated VCB.V,.,,,,,^ 1.5V ,T,=150 °C)
Emitter Cutoff Current
(V
EB
= 5.0V,I
C
=0 )
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
=10A,V
CE
= 5.0V)
(I
C
=15AV
C 6
= 5.0V)
Collector-Emitter Saturation Voltage
( l
c
= 10 A, I
B
= 100mA)
(l
c
=15A,l
B
= 150mA)
Base-Emitter Saturation Voltage
(I
C
= 15A, IB = 150mA) )
Base-Emitter On Voltage
(I
C
= 10A,V
CE
= 5.0V)
'CEO
ICEV
'ao
hFE
400
100
V
CE(iat)
15000
V
2.0
3.4
V
3.8
V
2.8
v«
V
—
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(l
c
=10A,V
CE
= 3.0V,f =1.0 MHz)
SWITCHING CHARACTERISTICS
Characteristic
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test Pulse width = 300 us , Duty Cycle 5 2.0%
(2)f
T
= !",.( 'f*.
V
CC
= 100V,I
C
=10A
I
B1
= 100mA,V
BE<om
=5.0V
to = 25us,Duty Cycle S 10%
Symbol
NPN
*d
*r
t,
«f
N
3.0
Typical
PNP
0.1
0.6
2.7
2.6
Unit
us
us
us
us
0.2
1.3
4.5
10
Power technology
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