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TISP7125F3 THRU TISP7180F3,
TISP7240F3 THRU TISP7380F3
MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP7xxxF3
(MV, HV) Overvoltage Protector Series
Patented Ion-Implanted Breakdown Region
- Precise DC and Dynamic Voltages
V
(BO)
V
DRM
Device
V
V
D Package (Top View)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
NU
NU
G
‘7125F3
100
125
‘7150F3
120
150
‘7180F3
145
180
‘7240F3
180
240
‘7260F3
200
260
‘7290F3
220
290
‘7320F3
240
320
‘7350F3
275
350
‘7380F3†
270
380
† For new designs use ‘7350F3 instead of ‘7380F3
Planar Passivated Junctions
- Low Off-State Current.................................<10
µA
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
P Package (Top View)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
NU
NU
G
NC - No internal connection.
NU - Non-usable; no external electrical connection should be made
to these pins.
Specified ratings require connection of pins 5 and 8.
Waveshape
2/10
8/20
10/160
10/700
10/560
10/1000
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
I
TSP
A
190
175
110
70
50
45
SL Package (Top View)
T
G
R
1
2
3
MD1XAB
Device Symbol
T
R
.............................................. UL Recognized Component
Description
The TISP7xxxF3 series are 3-point overvoltage protectors
designed for protecting against metallic (differential mode) and
simultaneous longitudinal (common mode) surges. Each terminal
pair has the same voltage limiting values and surge current
capability. This terminal pair surge capability ensures that the
protector can meet the simultaneous longitudinal surge require-
ment which is typically twice the metallic surge requirement.
SD7XAB
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
How To Order
For Standard
Termination Finish
Order As
TISP7xxxF3DR
TISP7xxxF3D
TISP7xxxF3P
TISP7xxxF3SL
For Lead Free
Termination Finish
Order As
TISP7xxxF3DR-S
TISP7xxxF3D-S
TISP7xxxF3P-S
TISP7xxxF3SL-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Device
TISP7xxxF3
TISP7xxxF3
TISP7xxxF3
Package
D, Small-outline
P, Plastic DIP
SL, Single-in-line
Carrier
Tape and Reel
Tube
Tube
Tube
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Description (continued)
Each terminal pair has a symmetrical voltage-triggered thyristor characteristic. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
These medium and high voltage devices are offered in nine voltage variants to meet a range of battery and ringing voltage requirements. They
are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Similar devices with working voltages of
58 V and 66 V are detailed in the TISP7072F3, TISP7082F3 data sheet.
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, 0
°C
< T
A
< 70
°C
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
Ω
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0
°C
< T
A
< 70
°C
(see Notes 1 and 3)
50 Hz, 1 s
D Package
P Package
SL Package
I
PPSM
330
190
100
175
110
95
70
70
70
50
45
4.3
5.7
7.1
250
-65 to +150
-65 to +150
A
100
120
145
180
200
220
240
275
270
Symbol
Value
Unit
V
DRM
V
I
TSM
di
T
/dt
T
J
T
stg
A
A/µs
°C
°C
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
NOTES: 1. Initially, the TISP
®
device must be in thermal equilibrium at the specified T
A
. The impulse may be repeated after the TISP
®
device
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
2. See Thermal Information for derated I
PPSM
values 0
°C
< T
A
< 70
°C
and Applications Information for details on wave shapes.
3. Above 70
°C,
derate I
TSM
linearly to zero at 150
°C
lead temperature.
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Electrical Characteristics for all Terminal Pairs, TA = 25
°C
(Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
V
D
= V
DRM
, 0
°C
< T
A
< 70
°C
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
±0.1
±0.15
±5
±10
48
41
52
44
47
39
40
31
23
17
18
13
27
23
Min
Typ
Max
±10
±125
±150
±180
±240
±260
±290
±320
±350
±380
±143
±168
±198
±269
±289
±319
±349
±379
±409
±0.8
±5
Unit
µA
I
DRM
V
(BO)
Breakover voltage
dv/dt =
±250
V/ms, R
SOURCE
= 300
Ω
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±20
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
V
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt =
±250
V/ms, R
SOURCE
= 300
Ω
I
T
=
±5
A, t
W
= 100
µs
I
T
=
±5
A, di/dt = - /+30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
=
±50
V
f = 1 MHz, V
d
= 1 V rms, V
D
= 0
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
V
d
= 1 V rms, V
D
= -1 V
V
d
= 1 V rms, V
D
= -2 V
V
d
= 1 V rms, V
D
= -5 V
V
d
= 1 V rms, V
D
= -50 V
V
d
= 1 V rms, V
D
= -100 V
A
V
A
kV/µs
µA
C
off
Off-state capacitance
f = 1 MHz, V
d
= 1 V rms, V
DTR
= 0
(see Note 4)
NOTE
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
37
31
40
34
36
30
31
24
17
13
14
10
20
17
pF
4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias V
D
, are
for the R-G and T-G terminals only. The last capacitance value, with bias V
DTR
, is for the T-R terminals.
Thermal Characteristics
Parameter
R
θ
JA
Junction to free air thermal resistance
Test Conditions
P
tot
= 0.8 W, T
A
= 25
°C
5 cm
2
, FR4 PCB
D Package
P Package
SL Package
Min
Typ
Max
160
100
135
Unit
°C/W
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Parameter Measurement Information
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
I
H
I
DRM
-v
V
DRM
I
DRM
I
H
V
D
I
D
I
D
V
D
V
DRM
+v
I
(BO)
I
(BO)
V
(BO)
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAAA
Figure 1. Voltage-Current Characteristic for T and R Terminals
T and G and R and G Measurements are Referenced to the G Terminal
T and R Measurements are Referenced to the R Terminal
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and G, or T and G Terminals
TISP7125F3 THRU TISP7180F3
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TISP7240F3 THRU TISP7380F3
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC7MAC
100
TC7HAC
10
I
D
- Off-State Current - mA
I
D
- Off-State Current - mA
10
1
V
D
= 50 V
1
V
D
= 50 V
0·1
V
D
= -50 V
0·01
0·1
V
D
= -50 V
0·01
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
Figure 2.
Figure 3.
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC7MAE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC7HAE
Normalized Breakdown Voltages
Normalized Breakdown Voltages
1.2
1.2
1.1
V
(BO)
1.1
V
(BO)
V
(BR)M
1.0
V
(BR)
Normalized to V
(BR)
I
(BR)
= 1 mA and 25
°C
Positive Polarity
0.9
V
(BR)M
1.0
V
(BR)
Normalized to V
(BR)
I
(BR)
= 1 mA and 25
°C
Positive Polarity
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
Figure 4.
Figure 5.
MARCH 1994 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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