PDTC143TEFT/R datasheet, PDF - EEWORLD Datasheet

PDTC143TEFT/R: DescriptionTRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-89, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size174KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PDTC143TEFT/R Overview

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-89, 3 PIN, BIP General Purpose Small Signal

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SC-89
package instruction	PLASTIC, SC-89, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTORS
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-F3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	PDTC143TEFT/R	934057542135	PDTC143TS,126	PDTC143TT/T3
Description	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-89, 3 PIN, BIP General Purpose Small Signal	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN	Bipolar Transistors - Pre-biased TRANS BISS AMMO LARGE	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
Maker	NXP	NXP	NXP	NXP
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	Single	SINGLE WITH BUILT-IN RESISTOR
package instruction	PLASTIC, SC-89, 3 PIN	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	-	unknown
ECCN code	EAR99	EAR99	-	EAR99
Other features	BUILT-IN BIAS RESISTORS	BUILT-IN BIAS RESISTORS	-	BUILT-IN BIAS RESISTORS
Maximum collector current (IC)	0.1 A	0.1 A	-	0.1 A
Collector-emitter maximum voltage	50 V	50 V	-	50 V
Minimum DC current gain (hFE)	200	200	-	200
JESD-30 code	R-PDSO-F3	R-PDSO-G3	-	R-PDSO-G3
Number of components	1	1	-	1
Number of terminals	3	3	-	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Polarity/channel type	NPN	NPN	-	NPN
surface mount	YES	YES	-	YES
Terminal form	FLAT	GULL WING	-	GULL WING
Terminal location	DUAL	DUAL	-	DUAL
transistor applications	SWITCHING	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	SILICON	-	SILICON

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