TN0606N7 datasheet, PDF - EEWORLD Datasheet

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TN0606N7: DescriptionSmall Signal Field-Effect Transistor, 1.6A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14; CategoryDiscrete semiconductor The transistor; File Size33KB，4 Pages; ManufacturerSupertex

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TN0606N7 Overview

Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14

TN0606N7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Supertex
Parts packaging code	DIP
package instruction	IN-LINE, R-CDIP-T14
Contacts	14
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW THRESHOLD
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	1.6 A
Maximum drain current (ID)	1.6 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	35 pF
JESD-30 code	R-CDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	4 W
Maximum power dissipation(Abs)	4 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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TN0606

TN0610

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

DSS

/ R

DS(ON)

DGS

(max)

60V

100V

1.5Ω

D(ON)

(min)

3.0A

GS(th)

(max)

1.6V

Order Number / Package

TO-39

—

TN0610N2

TO-92

TN0606N3

TN0610N3

TO-220

TN0606N5

TN0610N5

Quad P-DIP** Quad C-DIP*

TN0606N6

—

TN0606N7

—

14 pin side brazed ceramic DIP

** 14 pin plastic DIP

†

MIL visual screening available

High Reliability Devices

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Features

Low threshold — 1.6V max.

High input impedance

Low input capacitance — 100pF typical

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Package Options

Applications

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

TO-220

TAB: DRAIN

DGS

SGD

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Distance of 1.6 mm from case for 10 seconds.

7-51

DSS

DGS

20V

-55°C to +150°C

300°C

TO-39

Case: DRAIN

TO-92

14-Lead DIP

Note:

1. See Package Outline section for dimensions

2. See Array section for quad pinouts.

TN0606N7 Related Products

	TN0606N7	TN0610N2	TN0606N6
Description	Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14	Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 1.4A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Supertex	Supertex	Supertex
package instruction	IN-LINE, R-CDIP-T14	CYLINDRICAL, O-MBCY-W3	IN-LINE, R-PDIP-T14
Reach Compliance Code	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOW THRESHOLD	LOW THRESHOLD	LOW THRESHOLD
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	100 V	60 V
Maximum drain current (Abs) (ID)	1.6 A	1.5 A	1.4 A
Maximum drain current (ID)	1.6 A	1.5 A	1.4 A
Maximum drain-source on-resistance	2 Ω	2 Ω	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	35 pF	35 pF	35 pF
JESD-30 code	R-CDIP-T14	O-MBCY-W3	R-PDIP-T14
JESD-609 code	e0	e0	e0
Number of components	4	1	4
Number of terminals	14	3	14
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	METAL	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND	RECTANGULAR
Package form	IN-LINE	CYLINDRICAL	IN-LINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	4 W	6 W	3 W
Maximum power dissipation(Abs)	4 W	6 W	3 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	WIRE	THROUGH-HOLE
Terminal location	DUAL	BOTTOM	DUAL
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Parts packaging code	DIP	-	DIP
Contacts	14	-	14

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