Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN
Parameter Name | Attribute value |
Maker | SSDI |
Parts packaging code | TO-46 |
package instruction | CYLINDRICAL, O-XBCY-W3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.6 A |
Collector-emitter maximum voltage | 60 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 50 |
JEDEC-95 code | TO-46 |
JESD-30 code | O-XBCY-W3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | UNSPECIFIED |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | PNP |
Certification status | Not Qualified |
Guideline | MIL-19500 |
surface mount | NO |
Terminal form | WIRE |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 200 MHz |
Maximum off time (toff) | 300 ns |
Maximum opening time (tons) | 45 ns |
SFT2907A/46TX | SFT2907A/46 | SFT2907A/46TXV | SFT2907A/46S | |
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Description | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN |
Maker | SSDI | SSDI | SSDI | SSDI |
Parts packaging code | TO-46 | TO-46 | TO-46 | TO-46 |
package instruction | CYLINDRICAL, O-XBCY-W3 | CYLINDRICAL, O-XBCY-W3 | CYLINDRICAL, O-XBCY-W3 | CYLINDRICAL, O-XBCY-W3 |
Contacts | 3 | 3 | 3 | 3 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 0.6 A | 0.6 A | 0.6 A | 0.6 A |
Collector-emitter maximum voltage | 60 V | 60 V | 60 V | 60 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 50 | 50 | 50 | 50 |
JEDEC-95 code | TO-46 | TO-46 | TO-46 | TO-46 |
JESD-30 code | O-XBCY-W3 | O-XBCY-W3 | O-XBCY-W3 | O-XBCY-W3 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
Package shape | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | PNP | PNP | PNP | PNP |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO |
Terminal form | WIRE | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
Maximum off time (toff) | 300 ns | 300 ns | 300 ns | 300 ns |
Maximum opening time (tons) | 45 ns | 45 ns | 45 ns | 45 ns |
Guideline | MIL-19500 | - | MIL-19500 | MIL-19500 |