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MMBT5179_NL

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size483KB,12 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MMBT5179_NL Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

MMBT5179_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power consumption environment0.225 W
Minimum power gain (Gp)15 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)900 MHz
VCEsat-Max0.4 V
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