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NAND08GR4B3AZC1T

Description
512MX16 FLASH 1.8V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LFBGA-63
Categorystorage    storage   
File Size1MB,59 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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NAND08GR4B3AZC1T Overview

512MX16 FLASH 1.8V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LFBGA-63

NAND08GR4B3AZC1T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionLFBGA, BGA63,10X12,32
Contacts63
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time35 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B63
JESD-609 codee0
length15 mm
memory density8589934592 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8K
Number of terminals63
word count536870912 words
character code512000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA63,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
page size1K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.4 mm
Department size64K
Maximum standby current0.00005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
width8.5 mm

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