TrenchStop
®
2
nd
generation Series
IKW15N120T2
Low Loss DuoPack :
IGBT in 2
nd
generation
TrenchStop
®
technology
with soft, fast recovery anti-parallel EmCon diode
C
•
•
•
•
•
•
•
•
•
•
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop
®
2
nd
generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient
in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
V
CE
1200V
I
C
15A
V
CE(sat),Tj=25°C
1.75V
T
j,max
175°C
Marking Code
K15T1202
Package
PG-TO-247-3
G
E
PG-TO-247-3
Type
IKW15N120T2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current (Tj = 150°C)
T
C
= 25°C
T
C
= 110°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
175°C
Diode forward current (Tj = 150°C)
T
C
= 25°C
T
C
= 110°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
600V,
T
j, start
≤
175°C
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
1
Symbol
V
CE
I
C
Value
1200
30
15
Unit
V
A
I
Cpuls
-
I
F
60
60
25
15
I
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
-
60
±20
10
235
-40...+175
-55...+150
260
V
µs
W
°C
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.1
Sep 08
Power Semiconductors
TrenchStop
®
2
nd
generation Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
=0 V,
I
C
= 5 0 0 µ A
V
CE(sat)
V
G E
= 15 V,
I
C
=15A
T
j
= 25°C
T
j
= 150
°C
T
j
= 175
°C
Diode forward voltage
V
F
V
G E
=0 V,
I
F
= 1 5 A
T
j
= 25°C
T
j
= 150
°C
T
j
= 175
°C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
=0.6mA,V
C E
=V
G E
V
C E
= 12 00 V
,
V
G E
=0 V
T
j
= 25°C
T
j
= 150
°C
T
j
= 175
°C
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
C E
=0 V,V
G E
=20V
V
C E
=20V,
I
C
=15A
-
-
-
-
-
-
-
-
5.2
-
-
-
1200
Symbol
Conditions
R
thJA
R
thJCD
R
thJC
Symbol
Conditions
IKW15N120T2
Max. Value
0.63
1.12
40
Unit
K/W
Value
min.
typ.
-
1.7
2.1
2.2
1.75
1.8
1.75
5.8
max.
-
2.2
-
-
2.2
-
-
6.4
Unit
V
mA
-
-
-
-
8
0.4
4.0
20
600
-
nA
S
Power Semiconductors
2
Rev. 2.1
Sep 08
TrenchStop
®
2
nd
generation Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
V
G E
=15V,t
S C
≤1
0
µs
V
C C
= 600 V,
T
j , s t a r t
= 2 5°C
T
j , s t a r t
= 1 75
°C
-
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
=25V,
V
G E
=0 V,
f=1MHz
V
C C
= 96 0 V,
I
C
=40A
V
G E
=15V
-
-
-
-
-
IKW15N120T2
1000
100
56
93
13
-
-
-
-
-
-
pF
nC
nH
A
82
60
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
di
rr
/dt
T
j
= 25°C ,
V
R
= 60 0 V ,
I
F
=15A,
d i
F
/d t=
450A/µs
-
-
-
-
300
1.3
10
215
-
-
ns
µC
A
A/µs
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25°C ,
V
C C
= 60 0 V,
I
C
=15A,
V
G E
= 0 /1 5 V,
R
G
= 4 1 .8
Ω
,
L
σ
2 )
=1 26nH,
C
σ
2 )
=34pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
32
25
362
95
1.25
0.8
2.05
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.1
Sep 08
Power Semiconductors
TrenchStop
®
2
nd
generation Series
Switching Characteristic, Inductive Load,
at
T
j
=175
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
di
rr
/dt
T
j
= 175
°C
V
R
= 60 0 V ,
I
F
=15A,
d i
F
/d t=
460A/µs
-
-
-
-
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 175
°C
V
C C
= 60 0 V,
I
C
=15A,
V
G E
= 0 /1 5 V,
R
G
= 4 1 .8
Ω
,
L
σ
1 )
=3 15nH,
C
σ
1 )
=34pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
Symbol
Conditions
IKW15N120T2
Value
min.
typ.
31
30
450
176
1.5
1.3
2.8
460
2.65
13
123
max.
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
ns
µC
A
A/µs
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
4
Rev. 2.1
Sep 08
Power Semiconductors
TrenchStop
®
2
nd
generation Series
IKW15N120T2
t
p
=3µs
60A
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
10A
10µs
50µs
40A
T
C
=80°C
T
C
=110°C
150µs
1A
500µs
20ms
DC
0.1A
1V
20A
I
c
I
c
0A
10Hz
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
175°C,
D =
0.5,
V
CE
= 600V,
V
GE
= 0/+15V,
R
G
= 41.8Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤175°C;V
GE
=15V)
200W
150W
I
C
,
COLLECTOR CURRENT
POWER DISSIPATION
30A
20A
100W
P
tot
,
10A
50W
0W
25°C
50°C
75°C
100°C
125°C
150°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Maximum power dissipation as a
function of case temperature
(T
j
≤
175°C)
T
C
,
CASE TEMPERATURE
Figure 4. Maximum DC Collector current as
a function of case temperature
(V
GE
≥
15V,
T
j
≤
175°C)
Power Semiconductors
5
Rev. 2.1
Sep 08
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