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IPD400N06NG_08

Description
OptiMOS庐 Power-Transistor Features N-channel enhancement - normal level Avalanche rated
File Size501KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPD400N06NG_08 Overview

OptiMOS庐 Power-Transistor Features N-channel enhancement - normal level Avalanche rated

IPD400N06N G
OptiMOS
®
Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
60
40
27
V
mΩ
A
Type
IPD400N06N G
Package
Type
IPD400N06N G
Marking
PG-TO252-3
Package
400N06N
PG-TO252-3
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
27
19
108
80
6
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
1)
I
D
=27 A,
R
GS
=25
I
D
=27 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
W
°C
T
C
=25 °C
68
-55 ... 175
55/175/56
See figure 3
Rev. 1.3
page 1
2008-09-01

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Description OptiMOS庐 Power-Transistor Features N-channel enhancement - normal level Avalanche rated OptiMOS庐 Power-Transistor Features N-channel enhancement - normal level Avalanche rated
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