NAND128R4A1DZA1E datasheet, PDF

NAND128R4A1DZA1E: DescriptionFlash, 8MX16, 15000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63; Categorystorage storage; File Size150KB，5 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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NAND128R4A1DZA1E Overview

Flash, 8MX16, 15000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

Parameter Name	Attribute value
Maker	Numonyx ( Micron )
Parts packaging code	BGA
package instruction	BGA,
Contacts	63
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	15000 ns
JESD-30 code	R-PBGA-B63
JESD-609 code	e1
memory density	134217728 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	63
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED

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